STB8NM60N Discrete Semiconductor Products

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STB8NM60N is a type of insulated-gate bipolar transistor (IGBT). As the name suggests, this type of transistor is capable of providing both the bipolar and field effect transistor characteristics together. It is a combination of the MOSFETs and the Bipolar Junction Transistors (BJT), which makes it an ideal choice for high power switching applications. The transistor is able to take input current from either side of a low-voltage source and deliver it to the targeted load.

The STB8NM60N is a single depletion-mode transistor with a N-channel MOSFET and a PNP bipolar junction transistor. It is designed in a dual package configuration, allowing it to be integrated into various applications. Thanks to its high tolerance of input signals and its low on-state resistance, it is perfect for high-temperature, high-power switching applications. The input voltage range of 3-20 volts DC makes it suitable for a wide range of applications. The isolation voltage of STB8NM60N is also one of its great features, with a break-down voltage of 600Vrms.

The working principle of the STB8NM60N is quite simple. The input signal enters the transistor on one side and is received by the gate. This will then trigger a reaction from the device where it will trigger the gate in order to amplify the signal as it travels through the device. The output of the transistor is the amplified signal leaving the other side.

The main application field for the STB8NM60N is high-power switching applications. It can be used in DC-DC converters and other power supplies, as well as motor control and lighting applications. In terms of its price, it is cost-effective and able to combine the robustness of MOSFETs and BJTs together. The reliability of this type of transistor makes it a great choice for these applications.

The STB8NM60N is an ideal transistor for high-power switching applications. Thanks to its compatibility with the input signals and its low on-state resistance, it is able to provide great performance in terms of switching capacity. When incorporating it into an application, one should be aware of its voltage breakdown threshold in order to ensure its safe operation.

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