STB80N4F6AG Allicdata Electronics

STB80N4F6AG Discrete Semiconductor Products

Allicdata Part #:

497-16506-2-ND

Manufacturer Part#:

STB80N4F6AG

Price: $ 0.55
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 40V 80A D2PAK
More Detail: N-Channel 40V 80A (Tc) 70W (Tc) Surface Mount D²PA...
DataSheet: STB80N4F6AG datasheetSTB80N4F6AG Datasheet/PDF
Quantity: 1000
1000 +: $ 0.49991
Stock 1000Can Ship Immediately
$ 0.55
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 70W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Series: Automotive, AEC-Q101, STripFET™
Rds On (Max) @ Id, Vgs: 6 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STB80NF06AG is a high-current, 0.008-ohm, 80V, P-channel enhancement mode power MOSFET manufactured by STMicroelectronics. It belongs to the STripFET power MOSFET family with extremely low on-state resistance. This device\'s main feature is its simple drive requirements due to its Zero voltage turn-on mode, with a low drive voltage (as low as 4V), it\'s able to sustain large current with high efficiency. This power MOSFET has an electrically isolated, high performance, low profile package that allows it to be mounted close to the main heat source with minimized thermal resistance. Due to its low thermal resistance combined with its high current capabilities, this device is ideal for high current switching, also for load switching, buck/boost converters, AC/DC power supplies, motor control, etc.

When it comes to its operating principle, the STB80NF06AG uses a metal-oxide semiconductor as its gate structure, similar to that of a Junction Field Effect Transistor (JFET). This power MOSFET structure utilizes a layer of charge complete with a p-type channel material sandwiched between two n-type layers. When the gate is provided with positive voltage, the positive charged channel holes are attracted to the gate and electrons are repelled away from the gate. This action creates an inverted P-channel, and current can flow from the Source to the Drain, thus turning the device on.

The STB80NF06AG is suitable for a wide range of applications including motor control, DC/DC converters, advanced primary side synchronous rectification, and a wide range of power supplies and load switches. Due to its low resistance, this device is suitable for high efficiency applications such as synchronous rectification and load switching. This device also features low gate charge and low gate-source capacitance, thus helping to reduce gate control noise and circuit oscillations. This makes the STB80NF06AG suitable for switching applications where high switching frequency is required.

The STB80NF06AG can be used in a wide range of power management products and industrial systems. It is ideally suited for high current applications such as motor control and DC/DC converter stages. It is also suitable for applications in power supplies, switching circuits, and load switches. This device also offers high efficiency due to its low on-state resistance and can be used in power management and industrial applications where space saving is a priority.

Overall, the STB80NF06AG is a high current, low resistance, 0.008 ohm, 80V P-channel enhancement mode power MOSFET ideally suited for numerous power related applications. It offers high current capabilities, low gate-source capacitance, low on-state resistance, and simple drive requirements, making it suitable for high current applications and high efficiency designs. This power MOSFET is also suitable for applications in motor control, switching circuits, and advanced primary side synchronous rectification.

The specific data is subject to PDF, and the above content is for reference

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