| Allicdata Part #: | 497-16196-5-ND |
| Manufacturer Part#: |
STB80NF55-06-1 |
| Price: | $ 2.58 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 55V 80A I2PAK |
| More Detail: | N-Channel 55V 80A (Tc) 300W (Tc) Through Hole I2PA... |
| DataSheet: |  STB80NF55-06-1 Datasheet/PDF |
| Quantity: | 976 |
| 1 +: | $ 2.34360 |
| 50 +: | $ 1.88282 |
| 100 +: | $ 1.71543 |
| 500 +: | $ 1.38909 |
| 1000 +: | $ 1.17151 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | I2PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4400pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 189nC @ 10V |
| Series: | STripFET™ II |
| Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 40A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The STB80NF55-06-1 is a power MOS field effect transistor (MOSFET) with a wide variety of applications. This article will cover its application field and explain its working principle.
The STB80NF55-06-1 is a high voltage N-channel enhancement mode MOSFET transistor. It is suitable for 1250 V maximum drain-source voltage and a 200 A maximum drain current. It has a low gate charge and good thermal performance. Its typical turn-on switching time is about 5 μs. Also, the STB80NF55-06-1 is suitable for high frequency applications and has a maximum frequency of 2 MHz. It is very suitable for applications where fast switching speed and high current handling are needed.
The application field of the STB80NF55-06-1 includes motor control, solar inverter, Freescale AC servo drive, and other industrial power control circuits. This device can also be used in buck converters and LED lighting.
Now let’s look at the working principle of the STB80NF55-06-1. A MOSFET is an insulated gate field effect transistor. In this device, electron flow is controlled by the variation of an electric field in an insulated gate. This electric field is produced by a voltage applied to the gate. The STB80NF55-06-1 has an N-channel MOSFET structure in which current flows from the source to the drain when the gate is positively charged relative to the source. The N-channel MOSFET is turned off when the gate is connected to the source.
The STB80NF55-06-1 is a versatile device with a wide variety of applications. It is suitable for high voltage and high current applications, and has a fast switching speed. The working principle of this device is based on the insulated gate field effect transistor structure. The application field of the device includes motor control, solar inverter, Freescale AC servo drive, and other industrial power control circuits.
The specific data is subject to PDF, and the above content is for reference
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