STB80NF55L-06T4 Discrete Semiconductor Products

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The STB80NF55L-06T4 is an advanced N-channel power field-effect transistor (FET) integrated with advanced high-density MOSFET technology. It is a low-cost, low-power, and low-footprint power semiconductor component which can be widely used for applications such as motor driving and ultrasonic drivers. This article will discuss the field of application, work principles, and features of the STB80NF55L-06T4.

Application Field

The STB80NF55L-06T4 is ideal for a wide range of applications. It is suited for switching high-current, low-voltage DC applications such as motor driving and ultrasonic drivers, where it can provide reliable operation. The device also features low thermal resistance and soft body diode protection. For better control over the device, it can be connected with the AEC-Q101 qualified logic family IC pairing of the ST6148, ST6158, and ST6220. Furthermore, the STB80NF55L-06T4 is also capable of withstanding a maximum load current of up to 80A and a high avalanche energy of up to 6J.

Working Principles

The STB80NF55L-06T4 utilizes an N-channel MOSFET design, which is designed to block current flow between the drain and source, while allowing the source and drain to be independently adjusted by the gate voltage. As the voltage at the gate is increased, the current between the drain and source will also increase, allowing it to actively switch current. This device can also act as a voltage regulator, as the voltage applied to the gate varies the current supplied to the drain.

The STB80NF55L-06T4’s internal structure consists of two diodes, one each for the source and drain, that protect the device from potentially damaging events such as short circuits or an overcurrent condition. Additionally, the integrated protection diode allows for better conduction efficiency and protection against ESD-related hazards.

Features

The STB80NF55L-06T4 is designed with a wide range of features that make it well-suited for various applications. Its low-cost and low-power design allows it to be used in a variety of applications, while its wide operating temperature range allows it to be used in extreme conditions. Additionally, the device can handle a maximum voltage of 55V and a load current of up to 80A. Furthermore, its rugged design allows it to withstand high pulse currents and reverse voltages.

The STB80NF55L-06T4 is also designed with an integrated thermal shutdown circuit, which allows the device to self-adjust its operating temperature for improved efficiency and safety. Additionally, it also features an anti-parallel body diode, which can provide an additional level of protection from potential surge currents.

In conclusion, the STB80NF55L-06T4 is an advanced N-channel power field-effect transistor that is well-suited for a wide range of applications, such as motor driving and ultrasonic drivers. It offers a low-cost and low-power design with a wide operating temperature range, high load current and high avalanche energy. Additionally, the device features an integrated protection diode, thermal shutdown circuit and anti-parallel body diode for enhanced protection and efficiency. The STB80NF55L-06T4 is well-suited for low-voltage DC applications where reliability and efficiency are important.

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