STB8NM60T4 Discrete Semiconductor Products

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The STB8NM60T4 is a N-channel enhancement mode field effect power MOSFET transistor for use in switched or linear mode applications. It is a vertical D-MOS transistor which is extremely well-suited for high frequency applications over a wide voltage range and with a wide variety of gate materials. This device features high application voltage, low on-state resistance, low gate charge, and high switching speeds.

The STB8NM60T4 operates in the area of 40V and has a source-drain breakdown voltage of 8V. It is designed for switching applications that require high power and efficiency, such as motor drives, home appliances, low voltage applications, and telecom and datacom systems. It also works particularly well with high power devices since it does not require additional cooling for high current. It also has a very low total gate charge, which helps reduce switching losses.

The main application field of the STB8NM60T4 is as a power MOSFET, with its low on-resistance capable of handling high current applications. It is mainly used in motor drives, home appliances, lighting applications, and other high power applications. As a result, it is a great choice for manufacturers that require a low cost, reliable, and low power device.

The working principle of the STB8NM60T4 lies in its structure. When a voltage is applied to the gate terminal of the device, it modulates the width and/or concentration of carriers at the N-type junction layer, thus controlling the drain current. When the gate voltage is increased and exceeds a certain threshold, the channel is formed and the current from the source to the drain will start flowing.

The device has a high input impedance, which is important since the devices are often driven by voltage sources. Additionally, the device has a very low input capacitance and a low total gate charge, making it suitable for high frequency applications. The device also has a low output capacitance, making it suitable for use in high-frequency applications.

The device also has a low off-state leakage current, making it suitable for use in applications where power consumption is a priority. Additionally, the drain-source breakdown voltage is 8V, making it suitable for use in a wide range of applications. Furthermore, the device has a very low input capacitance, making it suitable for high frequency applications.

In conclusion, the STB8NM60T4 is an excellent choice for a wide range of applications. Its ability to handle high currents, low on-state resistance, low gate charge, and high switching speeds make it an ideal choice for motor drives, home appliances, low voltage applications, telecom and datacom systems, and other high power applications. Additionally, its low off-state leakage current, low input capacitance, and low total gate charge make it suitable for use in high frequency applications.

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