STB8N65M5 Discrete Semiconductor Products

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The STB8N65M5 is single field-effect transistor (FET) that is widely used for switching and amplifying electronic signals. It is an N-channel power MOSFET manufactured with STMicroelectronics\' advanced PowerMESH technology, featuring low on-resistance and fast switching speeds. In this article, we will go over the application field and working principle of the STB8N65M5.

Application Field

The STB8N65M5 is a general-purpose low-voltage MOSFET that performs outstanding switching performance at low gate-source voltages. It is designed to withstand high power dissipation without thermal runaway. This makes it ideal for a variety of applications including AC/DC converters, motor controls, UPS systems, as well as general-purpose switching and amplifying.

The STB8N65M5 is commonly used to control the switching of high-power devices such as DC motors, lamps and high-power LEDs. It can also be used to switch audio signals and to amplify weak signals. Its high current capabilities make it ideal for driving high-power loads. It is especially suitable for use in power supply circuits, where high capacity and low gate-source voltage are required.

The STB8N65M5 often turns higher power systems on and off by controlling relay coils. It can also be used to regulate the speed of motors via its built-in internal oscillator circuit. It is especially suitable for use in automotive applications, where reliable switching is required in noisy environments.

Working Principle

The STB8N65M5 is a N-channel enhancement mode MOSFET, meaning that it allows current through the drain-source channel when the gate-source voltage (Vgs) is larger than a specified threshold voltage. This means that the channel between the drain and source will only switch “on” when the voltage applied to the gate is sufficient to create a conductive channel from the source to the drain.

When the gate is not connected to a voltage source, the drain-source channel is said to be in its “OFF” state. When current flows through the drain-source channel, it is in its “ON” state. The MOSFET can be used to control the flow of current by adjusting the gate voltage. This can be achieved by connecting the gate to a voltage source in order to increase or decrease the conductance of the drain-source channel.

The STB8N65M5 is also equipped with an internally generated oscillator. This circuit allows the FET to switch on and off at a set frequency without the need of an external clock signal. This allows it to be used to regulate the speed of motors that have no means of external signal speeds.

The STB8N65M5 is an enhancement type MOSFET, meaning that it can be switched on and off by adjusting the gate-source voltage. It is an N-channel MOSFET, so it is suitable for switching high-power loads and for amplifying weak signals. It is also equipped with an internal oscillator, allowing it to be used for speed control applications. The STB8N65M5 is ideal for a variety of applications, from AC/DC converters to automotive applications.

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