STB8NM60D Discrete Semiconductor Products

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STB8NM60D is the highest current capacity DPAK (SOT-223) power Trench MOSFET manufactured by STMicroelectronics. The STB8NM60D is a 600V, 8.0A lower RDS(on) Trench MOSFET. It is optimized for driving high-value inductive loads and provides superior performance at higher frequencies.

The STB8NM60D is a silicon gate MOSFET which utilizes STMicroelectronics\' exclusive TrenchMOS technology to power electronic components requiring high current and high frequency. The device has an extremely low Qg, low Qrr, low Rdson and an extremely small package size making it ideal for high-current, high-frequency applications. Additionally, the STB8NM60D is able to operate at higher temperatures, making it suitable for power management and high-volume applications. As such, it’s one of the highest current capacity devices in its category.

The STB8NM60D is a single, lateral, enhancement-type MOSFET with an isolated source and drain structure. This device utilizes the common source design topology with a single drain and two terminals connected to the source and drain. The device is designed to switch at high frequencies and provide higher efficiencies than traditional MOSFETs due to its optimized array of cells.

The STB8NM60D has a voltage rating of 600V and an ON resistance of 13mΩ, making it capable of driving very large inductive loads. This, combined with its TrenchMOS technology, allows for superior performance at higher frequencies. The STB8NM60D also offers superior ESD and latch-up immunity, making it ideal for power management, automotive and high-speed switching applications.

In addition to its superior performance, the STB8NM60D provides better thermal management than traditional MOSFETs due to its lead-frame package. This allows for better heat dissipation and increased reliability, making it the perfect choice for applications that require high current. As such, the STB8NM60D is suitable for automotive, power management and high voltage, high frequency applications.

In summary, the STB8NM60D is the highest current capacity DPAK (SOT-223) power Trench MOSFET available. Its optimized array of cells, voltage rating of 600V and ON resistance of 13mΩ, combined with its TrenchMOS technology, make it ideal for high-current and high-frequency applications. The STB8NM60D also offers exceptional thermal and ESD immunity, making it the perfect choice for power management and automotive applications.

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