STB80NF55-08AG Discrete Semiconductor Products

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STB80NF55-08AG Application Field and Working PrincipleThe STB80NF55-08AG is a N-Channel general purpose MOSFET with a drain current of 80 amperes, a source to drain voltage of 55 V, a gate-source voltage of ±20 V, and a P channel with a drain current of 12.7 A and a drain-source voltage of 8 V. It is designed for high frequency switching and power supply applications.The STB80NF55-08AG is a stable, reliable and efficient N-channel MOSFET that is suitable for a variety of applications. It features a low on-state resistance and high breakdown voltage, making it an excellent choice for high frequency switching in power supplies and other high power applications. Additionally, it has a low input capacitance and fast switching speeds, making it suitable for high frequency switching applications.The STB80NF55-08AG is a vertical DMOS (double-gate MOSFET) N-Channel FET. It is based on trench technology in which the entire surface area of the drain is covered with a trench region to minimize the on-state resistance. The output characteristics of the MOSFET are determined by its gate-source voltage (Vgs), its source-drain voltage (Vds), and its drain current (Id).The working principle of the STB80NF55-08AG is based on the concept of a depletion region. This depletion region is created when a small voltage is applied to the gate. This causes a depletion of charge carriers in the region between the source and the drain. As the voltage is increased, the depletion region grows in size and becomes thicker, until eventually it is thick enough to prevent further current from flowing between the source and drain.The gate voltage determines the extent of the depletion region, and thus the level of current control. With the correct application of voltage, the STB80NF55-08AG can be used to control the flow of current through the transistor. Its features of high on-state resistance, low input capacitance, and fast switching speeds make it an ideal choice for switching applications in power supplies.In conclusion, the STB80NF55-08AG is a high performance yet cost-effective N-channel MOSFET that is suitable for a variety of applications. Its features of low on-state resistance and high breakdown voltage make it an excellent choice for high frequency switching applications in power supply systems and other high power applications. Additionally, its low input capacitance and fast switching speeds make it suitable for high frequency switching applications.

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