STB8N90K5 Allicdata Electronics

STB8N90K5 Discrete Semiconductor Products

Allicdata Part #:

497-17082-2-ND

Manufacturer Part#:

STB8N90K5

Price: $ 1.18
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: N-CHANNEL 900 V, 0.60 OHM TYP.,
More Detail: N-Channel 900V 8A (Tc) 130W (Tc) Surface Mount D2P...
DataSheet: STB8N90K5 datasheetSTB8N90K5 Datasheet/PDF
Quantity: 1000
1000 +: $ 1.07008
Stock 1000Can Ship Immediately
$ 1.18
Specifications
Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 130W (Tc)
FET Feature: --
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 100µA
Series: MDmesh™ K5
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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STB8N90K5 is a semiconductor device commonly used as a transistor. It is a high-voltage N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that utilizes a vertical double-diffused MOS (VDMOS) structure enabling it to switch up to 8 amperes comfortably and reliably. STB8N90K5 is designed for use in applications such as motor drives, lighting, audio amplifiers, fire alarms, and switching power supplies. This device is designed to withstand voltage spikes of up to 500V, making it suitable for a wide variety of applications.

The STB8N90K5 is constructed with multiple layers of silicon. The base layer is the channel, above which is the gate oxide layer, then the control gate, and finally the source and drain. This configuration allows the control gate to act as an isolation barrier between the channel and the source and drain. This isolation allows the control gate to independently control the channel, which can switch up to 8A.

The STB8N90K5 MOSFET is commonly used as a switch. The source and drain are connected to either a digital signal or an analog signal, and the control gate is connected to a signal which will change the state of the device. The device is in an "on" state when the control gate voltage is higher than the threshold voltage. When it is lower, the device is in an "off" state. This allows for the device to switch on and off, or for an analog signal to be modulated with a digital signal to control the output.

The STB8N90K5 can also be used as a power amplifier by controlling the current flow through the device. This is accomplished by applying a signal to the gate to control the flow of electrons from the source to the drain. The current through the MOSFET is then amplified. With its 8A rating, the STB8N90K5 can deliver power to a wide range of applications, such as motor drives, lighting, audio amplifiers, fire alarms, and switching power supplies.

The STB8N90K5 MOSFET is an excellent choice for applications requiring high power handling, efficient operation, and reliability. It is a low cost, yet versatile device capable of delivering up to 8A consistently. With its high voltage rating, it can be used in a variety of applications, from motor drives to power supplies.

The specific data is subject to PDF, and the above content is for reference

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