STB8N90K5 Discrete Semiconductor Products |
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Allicdata Part #: | 497-17082-2-ND |
Manufacturer Part#: |
STB8N90K5 |
Price: | $ 1.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | N-CHANNEL 900 V, 0.60 OHM TYP., |
More Detail: | N-Channel 900V 8A (Tc) 130W (Tc) Surface Mount D2P... |
DataSheet: | STB8N90K5 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.07008 |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 1.17A, 10V |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 130W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±30V |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Series: | MDmesh™ K5 |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STB8N90K5 is a semiconductor device commonly used as a transistor. It is a high-voltage N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that utilizes a vertical double-diffused MOS (VDMOS) structure enabling it to switch up to 8 amperes comfortably and reliably. STB8N90K5 is designed for use in applications such as motor drives, lighting, audio amplifiers, fire alarms, and switching power supplies. This device is designed to withstand voltage spikes of up to 500V, making it suitable for a wide variety of applications.
The STB8N90K5 is constructed with multiple layers of silicon. The base layer is the channel, above which is the gate oxide layer, then the control gate, and finally the source and drain. This configuration allows the control gate to act as an isolation barrier between the channel and the source and drain. This isolation allows the control gate to independently control the channel, which can switch up to 8A.
The STB8N90K5 MOSFET is commonly used as a switch. The source and drain are connected to either a digital signal or an analog signal, and the control gate is connected to a signal which will change the state of the device. The device is in an "on" state when the control gate voltage is higher than the threshold voltage. When it is lower, the device is in an "off" state. This allows for the device to switch on and off, or for an analog signal to be modulated with a digital signal to control the output.
The STB8N90K5 can also be used as a power amplifier by controlling the current flow through the device. This is accomplished by applying a signal to the gate to control the flow of electrons from the source to the drain. The current through the MOSFET is then amplified. With its 8A rating, the STB8N90K5 can deliver power to a wide range of applications, such as motor drives, lighting, audio amplifiers, fire alarms, and switching power supplies.
The STB8N90K5 MOSFET is an excellent choice for applications requiring high power handling, efficient operation, and reliability. It is a low cost, yet versatile device capable of delivering up to 8A consistently. With its high voltage rating, it can be used in a variety of applications, from motor drives to power supplies.
The specific data is subject to PDF, and the above content is for reference
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