STB80NF55L-08-1

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4350pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	100nC @ 4.5V
Series:	STripFET™ II
Rds On (Max) @ Id, Vgs:	8 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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STB80NF55L-08-1 Application Field and Working Principle

STB80NF55L-08-1 is a n-channel enhancement mode depletion metal-oxide semiconductor field-effect transistor (MOSFET) device. It is a four-terminal element with a conducting channel between the source and the drain regions that can be neurally activated by the voltage at the gate terminal. STB80NF55L-08-1 is widely used in switching and general purpose circuits, including power supply circuits, motor control, amplifier circuits and other analog applications.

What is a MOSFET?

MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. It acts like a switch by controlling the flow of current through the source and drain. The transistors are usually made up of two layers of metal oxide semiconductor material, and when a voltage is applied, it creates an electric field across the two layers, modulating the current flow between the source and the drain.

Working Principle of STB80NF55L-08-1

This device operates in the enhancement mode and has an N-channel MOS structure that is configured to operate directly from 5V logic circuits. The STB80NF55L-08-1 consists of an N-channel MOSFET that is configured to serve as an electronic switch. An electrical voltage at the gate terminal of the MOSFET produces a channel between the source and drain terminal. This channel enables the flow of electric current between the source and drain terminal, as determined by the gate voltage.When the gate voltage is at zero volts, there is no channel and the device is off, preventing any current flow between the source and the drain. When the voltage is increased the channel is enabled, allowing current to flow between the source and the drain. The magnitude of the current is controlled by the voltage across the gate and the drain terminals. When the gate voltage is equal to the drain voltage, the device is said to be in saturation and the current flow is maximized.

Application of STB80NF55L-08-1

The STB80NF55L-08-1 is ideal for usage in many kinds of applications. As an example, one of the specific applications where these power transistors are used is switching and general purpose circuits, including power supply circuits, motor control, amplifier circuits and other analog applications. The device is available in a wide variety of packages, ranging from automotive grade to offers a broad range of performance characteristics suitable for various specialized tasks.It is perfect for low-noise power supply and signal processing circuits. Since it has very low on-state resistance and is capable of operating at high-speeds, it can be used in low voltage, high-efficiency switching applications. Due to its high withstand voltage and high-voltage transfer reliability, it can also be used in high power applications, such as in motor drives or other industrial automation processes.

Conclusion

The STB80NF55L-08-1 is an n-channel enhancement mode depletion metal-oxide semiconductor field-effect transistor (MOSFET). The device operates on the principles of the electric field between the source and drain terminals and enables current flow between the two terminals when a voltage is applied. It is commonly used in switching and general purpose circuits, such as power supply circuits, motor control, amplifier circuits, and other analog applications. The device has been specifically designed for low-noise power supply and signal processing circuits, since its low on-state resistance, high-speed operation, and high-voltage transfer reliability make it a great choice for various applications.

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