| Allicdata Part #: | 497-12540-5-ND |
| Manufacturer Part#: |
STB80NF03L-04-1 |
| Price: | $ 3.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 30V 80A I2PAK |
| More Detail: | N-Channel 30V 80A (Tc) 300W (Tc) Through Hole I2PA... |
| DataSheet: |  STB80NF03L-04-1 Datasheet/PDF |
| Quantity: | 137 |
| 1 +: | $ 2.77200 |
| 10 +: | $ 2.47212 |
| 100 +: | $ 2.02734 |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | I2PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -60°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5500pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 4.5V |
| Series: | STripFET™ II |
| Rds On (Max) @ Id, Vgs: | 4 mOhm @ 40A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The STB80NF03L-04-1 belongs to a series of advanced Power MOSFETs which were developed by ST Microelectronics. It is a low-on-resistance N-channel Power MOSFET which is considered to be a good choice for designers who are working on low-on-resistance power stages for applications that require low-on-resistance and high efficiency.
The STB80NF03L-04-1 is mainly used in off-line SMPS and other applications where extremely low-on-resistance and high efficiency is required. It is a low-on-resistance, low-voltage N-channel Power MOSFET which can handle currents of up to 40A. The STB80NF03L-04-1 includes an internal current and temperature limiter which ensures that the device does not exceed its safe operating limits. It also includes an integrated charge pump and ESD protection.
The application field of the STB80NF03L-04-1 is mainly in the off-line AC/DC Converters, such as SMPS, chargers and adapters, as well as in other power stages that require low-on-resistance and high efficiency. It is suitable for applications in which the gate-source voltage does not exceed ±15V, and the drain-source voltage does not exceed 620V.
The working principle of the STB80NF03L-04-1 involves applying a voltage to the gate terminal. This voltage repels electrons from the channel, creating a depletion region in the channel that restricts current flow. When the voltage increases, the depletion region discharges and current flows freely through the channel. This is known as the drain-source voltage, or VDS.
In addition, the STB80NF03L-04-1 also incorporates an on-chip charge pump which provides the necessary power to charge the gate capacitance quickly. This in turn increases the device\'s switching speed and reduces power losses.
The STB80NF03L-04-1 is a reliable, efficient and high-performance N-channel power MOSFET. It is specially designed for low-on-resistance, high-efficiency applications and its integrated features make it a great choice for designers who are working on these types of power stages.
The specific data is subject to PDF, and the above content is for reference
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