STB85NF55LT4 Discrete Semiconductor Products |
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Allicdata Part #: | 497-5732-2-ND |
Manufacturer Part#: |
STB85NF55LT4 |
Price: | $ 1.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 55V 80A D2PAK |
More Detail: | N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D2P... |
DataSheet: | STB85NF55LT4 Datasheet/PDF |
Quantity: | 2000 |
1000 +: | $ 1.38452 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4050pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 5V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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:STB85NF55LT4 is a product of STMicroelectronics, a French-Italian semiconductor company that designs and manufactures microelectronic components. It is a high-performance single-gate FET, commonly used for power management in robust industrial applications.
A FET is an acronym for field-effect transistor, and a single-gate FET is a type of FET with only one gate. The gate is a control element that allows current to pass through the device when opened and blocks current when closed. The working principle of the STB85NF55LT4 single-gate FET is simple. When the gate is closed, no current can pass through the device; when the gate opens, current can flow through the device.
The STB85NF55LT4 single-gate FET is specifically designed to be used in robust power applications. It has a low on-resistance and fast switching speed. The device has a VGS(th) rating of 2.5V, which allows the device to be used in robust power applications. The device can also operate at high temperatures, making it suitable for use in harsh environment such as industrial and commercial applications. Furthermore, the device has a maximum drain-source voltage of 100V, which ensures a good protection in case of overvoltage.
The STB85NF55LT4 single-gate FET is also used in low-power applications. Because of its low power consumption, the device can be used in battery-powered devices and mobile applications. The low RDS(on) rating of the device allows for efficient power management, resulting in better battery life. The device is also designed to be EMC-compliant, which guarantees that it will not interfere with other electronic devices.
The STB85NF55LT4 single-gate FET is a versatile device that can be used in a range of different applications. It is suitable for both robust power applications and low-power applications, making it an ideal choice for a variety of applications. Furthermore, its low power consumption and fast switching speed make it a suitable choice for battery-operated devices and mobile applications. The device is also EMC-compliant, ensuring that it will not interfere with nearby electronic devices.
The specific data is subject to PDF, and the above content is for reference
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