STB80NF55-08-1

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3850pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	155nC @ 10V
Series:	STripFET™ II
Rds On (Max) @ Id, Vgs:	8 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IntroductionThe STB80NF55-08-1 is a single-chip field effect transistor (FET) designed for power management applications. It integrates a high current carrying capacity, low on-resistance and superior safe operating area (SOA). This helps it perform better in high power AC or DC switching applications than other available transistors. In this article, we will look into the application field and working principle of the STB80NF55-08-1. ApplicationThe STB80NF55-08-1 is a wide bandgap (WBG) power semiconductor device that operates at a high frequency. It is mainly used in power control circuits, switching power supplies, DC-DC converters, battery charging and power management applications. As it can handle high currents, it is also ideal for applications like LED lighting, motor control, solar power, home appliances and more. Its wide SOA ensures safety, making it suitable for advanced high power switching applications. Working principleThe STB80NF55-08-1 is a FET with a single-channel structure. The FET consists of three parts: the gate, drain and source. The gate is an insulated electrode made of metal oxide-semiconductor material. It operates as a capacitor, to create a strong electric field on the drain and source. The drain and source are made of a semiconductor material which can be opened and closed by the electric field that is created by the gate. When the positively charged gate is opened, the negatively charged electrons on the drain and source move to the gate, creating a closed circuit. The amount of current flowing through the device can be regulated by controlling the voltage of the gate. Hardware DesignThe STB80NF55-08-1 has a symmetrical pinout design which makes it easier to use in circuits. It features optimized PCB footprints, improved thermal performance and simplified hardware design. It supports up to 100 amp continuous currents and low ESD ratings, making it suitable for high power applications. The device also includes a built-in diode which helps to protect against excessive reverse leakage current. Device CharacteristicsThe STB80NF55-08-1 offers superior device characteristics such as low on-resistance, low switching power loss and low EMI emissions. It has a high current carrying capacity which enables it to operate at a high frequency with minimal losses. It has a wide SOA which allows it to operate safely in harsh environments without any thermal runaway. Additionally, the device is highly resistant to damage and breakdown. ConclusionThe STB80NF55-08-1 is a single-chip FET optimized for high power AC or DC switching applications. It offers superior device characteristics such as high current carrying capacity, low on-resistance and wide SOA. It also has many other features such as optimized PCB footprints, improved thermal performance and built-in diode for reverse leakage protection. All of these features make it an ideal device for advanced high power switching applications.

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