STD90N02L

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The STD90N02L is a surface-mount Power MOSFET device manufactured by ST Microelectronics. This type of device falls into the category of transistors, FETs (Field Effect Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), more specifically the single category.

Power MOSFET devices are used to aid in controlling electrical current in various types of circuits. The main purpose of ETLs is to minimize the number of components used, while allowing a variety of utilities to be easily incorporated in a circuit. This is done by converting the current passing through a circuit into a digital signal, allowing it to be manipulated with a microcontroller.

The STD90N02L MOSFET is commonly used in various types of electronics, including DC-DC converters, switch mode power supplies (SMPS), DC motor drives, high current audio amplifier circuits, mobile phone backlighting, and LED driving circuits. Its features, such as high input impedance, fast switching speed, low driving power requirements, and high power handling, make it suitable for applications requiring rapid switching, high power handling, and low power consumption.

The device is composed of a drain (D), a back gate (BG), a bulk (K) and a source (S) as its main components. The bulk is connected to the drain and the back gate, while the source is connected to the drain and the back gate. The back gate, also referred to as the substrate, is the control element of the MOSFET. When the substrate connection is positive, a majority of the charge carriers near the source and drain are in equilibrium. As the substrate connection is made less positive, the MOSFET will conduct, allowing current to flow from the source to the drain.

The STD90N02L’s maximum drain-source voltage is rated at 30V, while its maximum RDS(on) is 0.01Ω, allowing it to provide efficient power conversion. The gate threshold voltage for this device is -4.1V, meaning the threshold voltage must be below -4.1V for a MOSFET to remain in its off state. The on state resistance of the STD90N02L is 0.0045Ω, allowing it to handle high currents efficiently. The maximum power dissipation of the device is rated at 4W.

The MOSFET device is typically used in the linear region. This is the region where the drain current is proportional to the gate-source voltage. In this region, the on-state resistance of the device is limited, and the total power dissipation is reduced as the gate voltage is increased. In addition, the linear region is ideal for controlling the forward voltage drop across the drain-source terminals.

The STD90N02L also features protection against inrush current and thermal protection. Inrush current protection is designed to prioritize the converter circuit during startup, thus preventing damage due to excessive current. The device’s thermal protection feature effectively monitors the junction temperature of the device and shuts down the circuit when the temperature exceeds a certain value.

In conclusion, the STD90N02L is an extremely capable MOSFET device that offers excellent performance, power handling, and fast switching capabilities in a wide range of applications. Its features, protection mechanisms, and low-power consumption, make it an excellent choice for applications requiring fairly high voltage and current. The device is also highly suitable for various types of DC-DC converters, switch mode power supplies, DC motor drives, and LED driving circuits.

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