STD9N80K5

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The STD9N80K5 is a single field-effect transistor (FET) designed with power MOSFET technology. It is part of STMicroelectronics\' PowerTrench MOSFET product family, which is dedicated to providing reliable, power-efficient, and cost-effective solutions for a wide range of applications requiring power conversion. This article will discuss the application field, working principle, and design features of this device.

Application Field

The STD9N80K5 is especially suitable for applications where high amounts of power are needed in a small package, such as in switching power supplies, DC/DC converters, motor controls, and wireless charging systems. It is also suitable for applications where high frequencies and rapid switching times are needed, such as in power management modules and power amplifiers. Its small package size makes it ideal for applications where board space is limited, such as in portable and handheld electronics.

Working Principle

The STD9N80K5 utilizes a unique planar vertical double-diffused MOSFET (VDMOS) structure that combines high efficiency, current density, and transconductance. The device has an intrinsic body diode that gives it a low on-resistance and a virtually zero reverse recovery time. The device also has an N-channel MOSFET structure that acts as a fast and logical switch to control voltage and current. In addition, it is designed with a built-in temperature protection feature to ensure safe and reliable operation.

Design Features

The STD9N80K5 is rated for operation at a maximum drain-source voltage of 800 V and a drain current of 11 A. The device is capable of handling peak currents of up to 50 A. It has a maximum gate threshold voltage of 7 V, a gate-drain junction capacitance of 63 pF, and an RDS(on) of 7 mΩ. Additionally, the device has an ESD rating of 8 kV HBM and an integrated drain-source diode that protects the device from reverse voltage damage.

The STD9N80K5 has an industry-standard 3-pin TO-247 package, allowing for easy integration into existing products and circuits. The device also has an extreme temperature range of -55 to 175 °C, making it suitable for use in a variety of applications. It also has a low thermal resistance between the junction and the Case (RθJC) for improved power handling and thermal stability.

The STD9N80K5 also features a low switching noise, high stability, and high speed switching capability. This makes the device suitable for applications where low noise and good thermal stability are essential. In addition, the device is designed for a wide range of operation temperatures, making it suitable for a variety of environmental conditions.

In conclusion, the STD9N80K5 is a single-channel power MOSFET designed to provide reliable and efficient solutions for a wide range of applications requiring power conversion. Its low on-resistance, high transconductance, fast switching capability, temperature protection feature, and wide operating temperature range make it an ideal choice for applications where space is limited and high efficiency is needed.

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