STD9HN65M2

Series:	MDmesh™ M2
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650V
Current - Continuous Drain (Id) @ 25°C:	5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	820 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	11.5nC @ 10V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	325pF @ 100V
FET Feature:	--
Power Dissipation (Max):	60W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DPAK
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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Introduction

The STD9HN65M2 is a Power MOSFET transistor designed specifically to handle high current and voltage applications. It is part of the family of MOSFETs designed to provide an efficient and cost effective solution for power delivery, voltage regulation and motor control. It has a number of important features that make it suitable for a wide range of applications, including automotive and industrial applications.

Application Field and Working Principle

The STD9HN65M2 is primarily designed for use in applications where high voltage and current are required, or where low on-state resistance can help to reduce conduction losses. Its uses include the regulation of the voltage and current supplied to the motor in automotive and industrial applications, as well as the control of the switching of loads.The working principle of the STD9HN65M2 is based on a metal-oxide-semiconductor field-effect transistor (MOSFET). This type of transistor works by using an electrical field to control the movement of electrical charge across the transistor, allowing for a highly efficient and responsive power delivery.The key feature of the STD9HN65M2 is its ability to switch between a low and high power state with minimal power loss. This is achieved through its low on-state resistance, which helps to reduce voltage drops and wasted energy. It also features a low gate to source capacitance, which helps to reduce the amount of power required to operate the device, as well as to minimize power losses and increase the device’s efficiency.In addition, the STD9HN65M2 features a low gate threshold voltage, allowing it to run at even lower voltages than other MOSFETs. This helps to reduce the current draw and overall power consumption of the device, allowing it to operate more efficiently.

Benefits of Using the STD9HN65M2

The STD9HN65M2 is an ideal choice for applications requiring a reliable and cost effective power solution. It is an ideal choice for applications that require high current and voltage, as well as low on-state resistance. It is highly efficient and requires minimal power to operate, allowing it to deliver reliable, low-cost power. The main advantages of using the STD9HN65M2 are its low on-state resistance, low gate to source capacitance, and low gate threshold voltage. The low on-state resistance of the device helps to reduce conduction losses and wasted energy, while the low gate to source capacitance helps to reduce the amount of power needed to operate the device. The low gate threshold voltage helps to reduce the current draw and overall power consumption of the device, making it a highly efficient choice for a variety of power-sensitive applications. In addition, the STD9HN65M2 is a highly robust and reliable transistor, providing reliable performance in a variety of applications. It is also a cost effective solution for applications where energy efficiency is a priority.

Conclusion

The STD9HN65M2 is an ideal solution for demanding applications requiring high voltage and current, as well as low on-state resistance. It is an efficient and cost effective choice for applications requiring reliable power delivery and voltage regulation, and can provide reliable performance in a variety of applications. Its features, such as low on-state resistance, low gate to source capacitance, and low gate threshold voltage make it a highly attractive option for power-sensitive applications.

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