STD9NM40N Allicdata Electronics
Allicdata Part #:

497-13426-2-ND

Manufacturer Part#:

STD9NM40N

Price: $ 0.51
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 400V 5.6A DPAK
More Detail: N-Channel 400V 5.6A (Tc) 60W (Tc) Surface Mount DP...
DataSheet: STD9NM40N datasheetSTD9NM40N Datasheet/PDF
Quantity: 1000
2500 +: $ 0.46861
Stock 1000Can Ship Immediately
$ 0.51
Specifications
Series: MDmesh™ II
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 790 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 50V
FET Feature: --
Power Dissipation (Max): 60W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The STD9NM40N is a field-effect transistor (FET) used in many technological applications. It is classified as a single MOSFET, which stands for Metal Oxide Semiconductor Field-Effect Transistor. The MOSFET is the most commonly used type of FET and is employed in a wide variety of fields such as power electronics, modulation and switch control.

The STD9NM40N is typically used as a voltage-controlled switch. This transistor is capable of carrying up to 600 A in its drain current at 100 V. It is often used to build high- and low-side switches, as well as in low-side gate drivers. In addition, the STD9NM40N’s high level of performance and power makes it an ideal choice for high-power applications. Also, the device’s low on-resistance, high forward blocking voltage, and excellent noise characteristics make it suitable for many other types of applications including DC/DC converters, synchronous rectification, high-frequency switching, and motor control.

The STD9NM40N is built from a vertical double-diffused MOSFET structure. This configuration, along with the other physical characteristics of this device, allows the STD9NM40N to handle large currents while operating at lower temperatures. The vertical double-diffused structure also makes this transistor a suitable choice for high-voltage applications. The STD9NM40N’s current limit is typically set by the user, and is adjustable from 0 to 600 A.

In order to use the STD9NM40N for its intended purpose, it is important to understand its working principle. The device is a type of semiconductor component, so it functions similarly to other components such as diodes and resistors. However, the FET is built on a different principle, known as the MOSFET method. Essentially, in the MOSFET method, the transistor operates by controlling the flow of current through its source-drain channel. By adjusting the voltage applied to the gate, the device is able to control the current flowing through the source-drain path. This allows the user to switch the device on or off, or to regulate the flow of current.

The STD9NM40N is a versatile component and can be used in a wide variety of applications. As a high-power switch, it is ideal for power electronics, modulation, and switch control. The device’s low on-resistance and high blocking voltage make it suitable for applications such as DC/DC converters, synchronous rectification, high-frequency switching, and motor control. In addition, the device is also capable of handling large currents and operating at low temperatures, making it an ideal choice for high-voltage applications.

The specific data is subject to PDF, and the above content is for reference

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