Allicdata Part #: | 497-13426-2-ND |
Manufacturer Part#: |
STD9NM40N |
Price: | $ 0.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 400V 5.6A DPAK |
More Detail: | N-Channel 400V 5.6A (Tc) 60W (Tc) Surface Mount DP... |
DataSheet: | STD9NM40N Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.46861 |
Series: | MDmesh™ II |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 400V |
Current - Continuous Drain (Id) @ 25°C: | 5.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 790 mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 365pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 60W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The STD9NM40N is a field-effect transistor (FET) used in many technological applications. It is classified as a single MOSFET, which stands for Metal Oxide Semiconductor Field-Effect Transistor. The MOSFET is the most commonly used type of FET and is employed in a wide variety of fields such as power electronics, modulation and switch control.
The STD9NM40N is typically used as a voltage-controlled switch. This transistor is capable of carrying up to 600 A in its drain current at 100 V. It is often used to build high- and low-side switches, as well as in low-side gate drivers. In addition, the STD9NM40N’s high level of performance and power makes it an ideal choice for high-power applications. Also, the device’s low on-resistance, high forward blocking voltage, and excellent noise characteristics make it suitable for many other types of applications including DC/DC converters, synchronous rectification, high-frequency switching, and motor control.
The STD9NM40N is built from a vertical double-diffused MOSFET structure. This configuration, along with the other physical characteristics of this device, allows the STD9NM40N to handle large currents while operating at lower temperatures. The vertical double-diffused structure also makes this transistor a suitable choice for high-voltage applications. The STD9NM40N’s current limit is typically set by the user, and is adjustable from 0 to 600 A.
In order to use the STD9NM40N for its intended purpose, it is important to understand its working principle. The device is a type of semiconductor component, so it functions similarly to other components such as diodes and resistors. However, the FET is built on a different principle, known as the MOSFET method. Essentially, in the MOSFET method, the transistor operates by controlling the flow of current through its source-drain channel. By adjusting the voltage applied to the gate, the device is able to control the current flowing through the source-drain path. This allows the user to switch the device on or off, or to regulate the flow of current.
The STD9NM40N is a versatile component and can be used in a wide variety of applications. As a high-power switch, it is ideal for power electronics, modulation, and switch control. The device’s low on-resistance and high blocking voltage make it suitable for applications such as DC/DC converters, synchronous rectification, high-frequency switching, and motor control. In addition, the device is also capable of handling large currents and operating at low temperatures, making it an ideal choice for high-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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