Allicdata Part #: | STD90NS3LLH7-ND |
Manufacturer Part#: |
STD90NS3LLH7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CHANNEL 30V 80A DPAK |
More Detail: | N-Channel 30V 80A (Tc) 57W (Tc) Surface Mount DPAK |
DataSheet: | STD90NS3LLH7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | STripFET™ H7 |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: | 1.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 13.7nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2110pF @ 25V |
FET Feature: | Schottky Diode (Body) |
Power Dissipation (Max): | 57W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The STD90NS3LLH7 is an N-Channel 60V withstand voltage single MOSFET produced by STMicroelectronics. It is part of STMicroelectronics’ STripFET™ III family. The MOSFET is designed for use in applications such as DC-DC converters, lighting controllers, industrial motor controllers, and automotive applications.
The STD90NS3LLH7 is designed to withstand voltage spikes up to 60V, which is much higher than most other MOSFETs on the market. The device is optimized for low RDS(on) values, which lowers the device\'s conduction and switching losses, resulting in improved efficiency. This device also features Avalanche Rugged™ technology, meaning it can handle high energy, repetitive ESD events, making it well suited for robust applications.
The working principle of the STD90NS3LLH7 is a unique combination of gate and body drive. In this setup, a negative voltage is applied to the gate, while the body is connected to a positive voltage source. This creates a P-N junction between the gate and the body. This junction causes minority carriers to form in the gate-body region as a result of the diode forward biasing. As this region is occupied by minority carriers, the unit\'s threshold voltage is shifted in the negative direction, thus lowering the voltage needed to open the gate.
The combination of gate and body drive also helps to reduce gate lag. Gate lag occurs when an MOSFET takes longer to turn off than on, thus resulting in a decrease of efficiency. This problem is counteracted by the combined gate and body drive, as the body voltage helps to reduce the amount of time the gate takes to switch off. This technology increases the speed and reliability of the STD90NS3LLH7.
The STD90NS3LLH7 can be used in a wide variety of applications due to its high withstand voltage and Avalanche Rugged™ Technology. This device can be used for DC-DC converters, motor controllers, LED lighting controllers, automotive electronics, and any other application where precise control and reliable operation are required. This device’s low RDS(on) values ensure low conduction and switching losses and improved efficiency.
The specific data is subject to PDF, and the above content is for reference
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