STD95N04 Discrete Semiconductor Products

Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	6.5 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	54nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2200pF @ 25V
FET Feature:	--
Power Dissipation (Max):	110W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DPAK
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Series:	STripFET™
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel

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Introduction

The STD95N04 is a silicon N-channel, depletion-mode field-effect transistor (FET) used in various applications. It has a similar terminal functionality as a MOSFET, with the exception that it is depletion mode instead of enhancement mode. The STD95N04 can be used as an isolator, amplifier, switching circuit, source follower, shut-off switch, and various other applications. This article will discuss the application fields, construction, and working principle behind the STD95N04 FET.

Construction and Terminals

The STD95N04 is a single FET arm constructed from advanced silicon substrate technology. It consists of a single FET arm mounted atop a silicon substrate. This substrate is composed of two parts, the source and drain. The source is the negative terminal, and the drain is the positive terminal.The FET arm consists of four terminals. These are the Gate, Source, Drain, and Body (G, S, D, and B respectively). The Gate terminal is the input terminal, while the Source and Drain terminals are output terminals. The Body terminal is the internal core of the FET, which provides the electric field necessary for conduction.

Application Field

The STD95N04 FET has a wide variety of application fields. In general, it is used as an isolator, amplifier, and for switching applications. It can also be used in audio and power amplifiers, voltage regulators, current sensors, switching power supply circuits, and more.It is also commonly used as a power amplifier due to its high input impedance, high frequency response, and low noise figure. Additionally, its low on-resistance makes it suitable for high current applications.In addition to these application fields, the STD95N04 FET has been used in medical imaging systems, variable speed drives, power electronics, and other special applications.

Working Principle

The STD95N04 FET works by controlling the current flow between the source and drain terminals. It works in a similar manner to a MOSFET, but in a depletion mode instead of enhancement mode.When a voltage is applied to the Gate terminal, a depletion region is created between the source and drain terminals. This depletion region acts as a resistor, limiting the amount of current that can flow from the source to the drain.The FET also utilizes two other effects: the bulk effect and the pinch-off effect. The bulk effect causes the depletion region to become wider as more voltage is applied to the Gate terminal. The pinch-off effect causes the depletion region to become narrower if the Gate voltage is decreased.These two effects work together to control the current flow in the FET. They allow for a wide range of amplification and switching capabilities, making the STD95N04 suitable for a wide range of applications.

Conclusion

The STD95N04 FET is a single FET arm device constructed from advanced silicon substrate technology. It is commonly used in various applications, including isolation, amplification, and switching circuits. The FET works in a similar fashion to a MOSFET, but in a depletion mode instead of enhancement mode. Its wide range of applications and low on-resistance make it a popular choice among designers.

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