STD95N4LF3 Allicdata Electronics
Allicdata Part #:

497-8776-2-ND

Manufacturer Part#:

STD95N4LF3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 40V 80A DPAK
More Detail: N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount DPA...
DataSheet: STD95N4LF3 datasheetSTD95N4LF3 Datasheet/PDF
Quantity: 5000
Stock 5000Can Ship Immediately
Specifications
Series: STripFET™ III
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 6 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
FET Feature: --
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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STD95N4LF3 transistors are a type of field effect transistors (FETs), which belong to the single MOSFETs category. These transistors support a wide range of applications, due to their high input impedance and relatively low resistance, enabling them to be used in various digital circuits.

Like other MOSFETs, a channel through which electrons can flow is formed between the two source regions of the transistor. This makes STD95N4LF3 transistors capable of amplifying electronic signals as they pass through. Being single MOSFETs, they have one gate that only controls the flow of electrons between the drain and the source. The gate consists of a metal oxide substrate, which blocks the flow of electrons between the drain and the source when a potential voltage is applied to it.

The working principle of STD95N4LF3 transistors can be best described by their small-signal model. When a small voltage is applied to the gate of the transistor, a low resistance channel is formed between the drain and the source. This channel allows electrons to flow between the drain and source, resulting in current amplification. When the gate voltage increases, the channel width increases as well, resulting in a higher flow of current. Conversely, when the gate voltage decreases, the channel length reduces, and the flow of electrons is reduced.

The three main application fields of STD95N4LF3 transistors are power switching, analog switching, and digital signal processing. As power switches, they are used for the control of AC and DC loads in high power applications, such as power supplies, motor drivers and solar panels. As analog switches, they are used for the amplification of analog signals in audio and video applications, such as amplifiers and mixers. Finally, as digital signal processors, they are used in microprocessors, bit-slice processors, and other digital electronic applications.

In summary, STD95N4LF3 transistors are single MOSFETs that are used in a wide range of applications. Their working principle is based on the small-signal model, wherein the channel length between the drain and the source is adjusted by applying a potential voltage to the gate. Finally, they are used as power switches, analog switches, and digital signal processors in high power applications, audio and video applications, and digital electronic applications, respectively.

The specific data is subject to PDF, and the above content is for reference

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