| Allicdata Part #: | 497-7979-2-ND |
| Manufacturer Part#: |
STD90N03L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 30V 80A DPAK |
| More Detail: | N-Channel 30V 80A (Tc) 95W (Tc) Surface Mount DPAK |
| DataSheet: |  STD90N03L Datasheet/PDF |
| Quantity: | 1000 |
| Series: | STripFET™ III |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 5V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2805pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 95W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | DPAK |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The STD90N03L is a Power MOSFET ideal for applications that require low-frequency switching (typically below 50kHz) due to its high threshold voltage (Vth) of 5V and low-drain saturation voltage of 0.37V.
The STD90N03L has several unique characteristics that make it well suited for a variety of applications. The device is a 3-terminal poly gate-oxide insulated gate field effect transistor (IGFET) with a major power rating of 90W. It has a drain-source breakdown voltage of 60V, a maximum gate-source voltage of ±20V, and an on-state resistance of 0.022 ohms.
The STD90N03L is designed to operate in an enhancement mode, meaning that the gate-source voltage must be raised to beyond a certain threshold level in order for the FET to “turn on”, allowing current to flow. Conversely, when the gate-source voltage is decreased below the threshold voltage, the device “turns off” and the current flow is stopped.
The device’s P-channel (positive charge) configuration means that the source of the device is connected to the voltage source. When the gate voltage is lower than the source voltage, the device is considered to be in the off-state. When the gate-source voltage is increased to above the threshold level, the device is considered to be in the on-state.
In addition to its low-frequency switching capability, the STD90N03L offers excellent thermal stability, low gate charge and ultra-low on-state resistance. As a result, the device is an ideal choice for applications that require high efficiency and low power consumption, such as solar panels, battery chargers and DC motor controllers.
In conclusion, the STD90N03L is an ideal choice for low-frequency switching applications. Its P-channel configuration, high threshold voltage and low on-state resistance make it a great choice for applications that require high efficiency and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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