STD90N4F3

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The ST90N4F3 is an enhancement-type N-channel MOSFET general purpose transistor. It is specifically designed for use in low voltage applications as it operates over an extremely low VGS range and offers a typical Gate Threshold Voltage (VGS) of only 0.45V. It also offers exceptionally low Rdson values and good ESD and latch-up performances.

The ST90N4F3 is a very robust device and is ideal for power management in a wide variety of applications such as smart phone and tablet applications, automotive, and industrial electronic systems. It is well suited for use in low power DC as well as extremely low power AC applications.

The ST90N4F3 features an N-channel MOSFET in an SO-8 package. The device is based on the enhancement-mode structure, which is a gain-controlled field-effect device working through the modulation of the current flowing between the source and the drain while the Gate-to-Source Voltage is held constant.

The ST90N4F3 has four distinct operating regions which are operated under varying conditions to implement the desired performance. In the cut-off region, the Gate-to-Source voltage (VGS) is negative, the device off and no current flows through the Drain-Source channel. In the sub-threshold region, the voltage is less than the threshold voltage (VGS). This region is usually used for the low current applications in order to reduce power consumption.

When the Gate-to-Source voltage is between the threshold voltage and the pinch-off voltage, the device is in the linear (or ohmic) region. This region is where changes in voltage across the terminals directly changes the current through the channel. For current densities greater than 100mA/cm2 the device enters the saturation region. This region is used to achieve the highest possible current handling capacity of the device without having to use a Drain-Source voltage higher than the threshold voltage.

The ST90N4F3 is also capable of a low Gate input capacitance, very low gate input leakage current, and low gate capacitance. This is especially beneficial in applications that require low power consumption and low gate drive current.

The ST90N4F3 is designed for use in a wide range of applications including power management solutions, audio systems, instrumentation, automotive and industrial electronic systems. In particular, the device is well suited for use in low power DC, AC and high frequency applications.

In summary, the ST90N4F3 is an excellent choice for a wide range of low power applications. It provides excellent performance in terms of low VGS, low Rdson, and low Gate leakage current, as well as excellent ESD and latch-up protection. It can also handle high frequency applications with its low gate input capacitance and excellent thermal performance.

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