STD95N4F3

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There are a variety of transistors available to meet different needs, each with its own set of advantages and disadvantages. The STD95N4F3 is a widely popular single Field Effect Transistor (FET), suitable for various general-purpose applications. This document will discuss the application field of STD95N4F3, as well as its basic operation principle.

Overview

STD95N4F3 is a N-channel metal-oxide-semiconductor Field-effect Transistor (MOSFET). It has a Drain-Source Voltage rating of 55 volts and a maximum continuous drain current of 5.5 Amps. It has low on-resistance and low input capacitance, and provides excellent thermal performance. It is mainly used to switch, amplify and isolate signals in a variety of applications.

Application Field

STD95N4F3 is mainly used in applications that require high voltage load switching and amplification. These applications include power ratio controllers, power switching circuits, power supplies, motor drives, and high voltage/high current applications. It can also be used for other purposes, such as isolated signal transmission, power regulation and high frequency amplification.

Due to its excellent thermal stability, STD95N4F3 is also suitable for applications that require low junction temperature operation, such as LED drivers, solar cell regulators and battery chargers. Additionally, it is a good choice for use in radio frequency (RF) applications due to its low gate-source capacitance, low drain-source coupling, and low input capacitance.

Working Principle

MOSFETs work by controlling the amount of current passing through them by manipulating the electric field between the drain and source electrodes. In the case of the STD95N4F3, this electric field is created by applying a voltage to the gate, which then attracts or repels electrons to the drain and source respectively, thereby controlling the flow of current through the transistor. When a voltage is applied to the gate, it induces a channel of electrons between the drain and the source, allowing current to pass through. The amount of current passing through the channel is proportionate to the voltage that is applied to the gate, as well as other factors such as source/drain resistance, junction temperature, and input capacitance.

MOSFETs are ideal for switching and amplification applications, because they can be used to control a large amount of current using a low input voltage. Additionally, they are extremely efficient in terms of power consumption and space usage. The STD95N4F3, in particular, offers a low on-resistance, excellent thermal performance, and low input capacitance, making it suitable for a variety of applications.

Conclusion

The STD95N4F3 is an excellent choice for a variety of applications. It is a single N-Channel MOSFET, with a Drain-Source Voltage rating of 55 volts and a maximum continuous drain current of 5.5 amps. It is mainly used for load switching, amplifier, and high voltage/high current applications. Additionally, its low on-resistance and low input capacitance make it suitable for use in radio frequency (RF) applications. The STD95N4F3 is an excellent choice for those looking for an efficient, reliable, and cost-effective transistor solution.

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