STD9NM50N-1

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The STD9NM50N-1 is a high-performance n-channel enhancement-mode power MOSFET, which is mainly used in switching and linear applications in control, audio amplifiers and power supplies. The STD9NM50N-1 MOSFET has a maximum drain-source voltage of 560V and a maximum drain current of 9A. It also offers excellent tight parameter distribution allowing 25% less yield loss due to abnormalities in the given application field.

The operating principles of an N-channel (MOS) transistor are fundamentally based on the bias of the gateoxide layer which is responsible for controlling the flow of the drain-source current. The gate oxide layer acts as a insulator between the gate and the substrate, and when a positive voltage is applied across the gate and the source it allows current flow from the drain to the source by turning the MOSFET on. Conversely, if the voltage across the gate and the source is reversed with a negative voltage, the MOSFET will be turned off and no current will flow from the drain to the source.

The efficiency of the STD9NM50N-1 is improved because of the HyperFET(TM) Power MOSFET technology. This means that the switching performance and the linear operation characteristics are improved due to the lower ON-resistance, the cost benefits and superior RDS(ON) performance.

The low input capacitance and fast switching time of the STD9NM50N-1 make it ideal for high frequency switching applications. The high power switching also works very well in car alarms, wireless communication systems and consumer audio amplifiers. Due to the low RDS(ON), the power dissipation of the device is reduced making it more energy efficient.

The discharge of internal gate charge can be easily monitored and controlled with the Shutdown (SD) pin. The SD pin is the main feature of the device that helps improve the protection of the device from negative gate-drain voltage spikes. The STD9NM50N-1 also offers superior temperature performance thanks to its built-in temperature coefficient.

The STD9NM50N-1 design also features an integrated drain-source diode which protects the device against current overshoots. This diode helps to protect the device against short transient overloads and electrostatic discharge. The diode works by providing a reverse conduction path to enable current tracking and control.

In conclusion, the STD9NM50N-1 has a variety of features and benefits that make it suited to wide range of applications. Its high efficiency, low power dissipation and low ON resistance, as well as its integrated diode, all make it ideal for high temperature and high frequency switching applications.

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