
Allicdata Part #: | 497-4105-2-ND |
Manufacturer Part#: |
STD95NH02LT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 24V 80A DPAK |
More Detail: | N-Channel 24V 80A (Tc) 100W (Tc) Surface Mount DPA... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2070pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 5V |
Series: | STripFET™ |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 24V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STD95NH02LT4 is a type of field effect transistor (FET), more specifically a single monolithic MOSFET. This device is designed for use in a variety of applications, and utilizes a unique working principle that allows for precise control of conduction. In this article, we will discuss the application fields and working principles associated with the STD95NH02LT4.
Application Fields
The STD95NH02LT4 can be used in a number of different applications, all of which require precise control of conduction. This device is most commonly used as an amplifier, as it is capable of amplifying small signals with very little distortion or noise. It can also be used in switching applications, as it is capable of switching large currents quickly and efficiently. Additionally, the STD95NH02LT4 can also be used in a variety of other applications, such as car radios, sound systems, and computer monitors.
Working Principle
The working principle of the STD95NH02LT4 is based on the field-effect principle. Essentially, this device uses the electric field generated by a gate electrode to control the current that flows through the semiconductor material. The gate electrode is connected to a voltage supply, and when a voltage is applied to it, an electric field is generated. This electric field controls the amount of current that flows through the semiconductor material, allowing for a precise amount of control over conduction.
The STD95NH02LT4 also uses an enhancement-mode MOSFET structure. This means that the device is normally off and has to be activated by applying a voltage to the gate electrode. This allows the device to be used as a switch, as the conduction can be quickly and efficiently switched on and off. Additionally, the structure of the device also allows for the efficient amplification of small signals.
Conclusion
The STD95NH02LT4 is an excellent choice of FET for a number of different applications. Its field-effect principle and enhancement-mode MOSFET structure allows for precise control of conduction, and its low power consumption makes it ideal for use in battery-powered applications. The device is especially well suited for use as an amplifier or switch, and its small size makes it well suited for use in portable devices. Therefore, the STD95NH02LT4 is an ideal choice for a variety of applications.
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