STD95N2LH5 Allicdata Electronics
Allicdata Part #:

497-7005-2-ND

Manufacturer Part#:

STD95N2LH5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 25V 80A DPAK
More Detail: N-Channel 25V 80A (Tc) 70W (Tc) Surface Mount DPAK
DataSheet: STD95N2LH5 datasheetSTD95N2LH5 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: STripFET™ V
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 5V
Vgs (Max): ±22V
Input Capacitance (Ciss) (Max) @ Vds: 1817pF @ 25V
FET Feature: --
Power Dissipation (Max): 70W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The STD95N2LH5 is a single-type FET, MOSFET device that features a low on-resistance and fast switching times. The device is specially designed to provide optimal performance in various applications requiring process control, motor control, switching power supplies, and motor speed control. As MOSFETs are key components in modern power management designs, the STD95N2LH5 offers a superb solution for a variety of power management applications.

The STD95N2LH5 is a depletion FET with a drain-source current of 3A, a drain-source on-resistance of 0.15R, a gate-drain capacitance of 0.15C, and a drain-source voltage rating of 20V. The device features an ultra-low RDS(ON), and an ultra-fast switch times that allow it to be used in high-speed switching operations. The device also offers an integrated current sensing feature, which gives the device more capability in load control and protection applications.

In terms of working principle, the basic operation of the STD95N2LH5 is based on the principles of MOSFETs. In this device, when a voltage is applied to the gate terminal, it creates an electric field in the channel area, which then causes the individual charge carriers in the channel to move. This creates an inversion layer in the channel region, allowing current to travel from the source to the drain along this inversion layer. By varying the voltage or current applied to the gate, the amount of current that can travel through the channel can be varied, thus allowing the device to be used for controlling and switching applications.

As for the applications, the STD95N2LH5 is suitable for a variety of markets and applications, including consumer electronics, automotive, computer, and industrial. This device is also suitable for process control applications, as it provides a fast switching time and an integrated current sensing feature. It can also be used to control the speed of motors, switching power supplies, and in motor speed control applications. Finally, this device can also be used to control and protect the load in power-management applications.

In conclusion, the STD95N2LH5 is an ultra-low on-resistance, fast switching single-type FET, MOSFET. It features an ultra-low RDS(ON), with gate-drain capacitance of 0.15C and a drain-source voltage rating of 20V. It is suitable for a variety of markets and applications, including consumer electronics, automotive, computer, and industrial, and gives the device a wide range of uses in process control, motor control, switching power supplies, and motor speed control applications.

The specific data is subject to PDF, and the above content is for reference

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