STD9NM50N

Series:	MDmesh™ II
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	500V
Current - Continuous Drain (Id) @ 25°C:	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	560 mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	570pF @ 50V
FET Feature:	--
Power Dissipation (Max):	45W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DPAK
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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Introduction

The STD9NM50N is a power MOSFET transistor with a drain-source breakdown voltage of 500V and a drain current of 9A. It is made from STMicroelectronics\' advanced planar technology, featuring a low on-state resistance and a low gate threshold voltage, making it well suited for use in switch-mode power supply circuits.

Application

The STD9NM50N can be used in switch-mode power supplies, DC-DC converters and power supply circuits. It is also suitable for high-frequency switching applications such as AC-DC power supplies, inverters, motor control and high-speed logic circuits. In addition, the STD9NM50N can be used in UPS, motor drive and UPS inverters, and many other power applications.

Working Principle

The STD9NM50N operates based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) principle. It consists of a source, drain and gate that are integrated into a single device. The MOSFET has no moving parts, making it ideal for use in high speed switching applications.When the gate voltage is applied, it works to create an electric field that modulates an internal semiconductor channel between the source and the drain. This modulated channel acts as an electronic switch, allowing current to flow from the source to the drain. The gate voltage can be modulated according to the desired current flow and can be used to control the drain current. The current flows from the source to the drain, and is controlled by the gate voltage.

Overview

The STD9NM50N is a power MOSFET transistor with a drain-source breakdown voltage of 500V and a drain current of 9A. It is made from STMicroelectronics\' advanced planar technology, featuring a low on-state resistance and a low gate threshold voltage, making it well suited for use in switch-mode power supply circuits. The STD9NM50N operates based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) principle, and can be used in switch-mode power supplies, DC-DC converters and power supply circuits. It is also suitable for high-frequency switching applications such as AC-DC power supplies, inverters, motor control and high-speed logic circuits.

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