Allicdata Part #: | 497-11214-2-ND |
Manufacturer Part#: |
STD96N3LLH6 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 80A DPAK |
More Detail: | N-Channel 30V 80A (Tc) 70W (Tc) Surface Mount DPAK |
DataSheet: | STD96N3LLH6 Datasheet/PDF |
Quantity: | 1000 |
Series: | DeepGATE™, STripFET™ VI |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 70W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STD96N3LLH6 is a high-voltage N-channel vertical DMOS transistor. It features fourth-generation advancements and significantly improved performance from the previous generations, making it one of the best choices for high voltage power applications. This device is suitable for use in high voltage applications such as DC-DC converters, lighting, audio, industrial and automotive power management. Its high power capability also enables its application in a variety of different gate drive circuits. The device is available in three versions; the STD96N3LLH6HRA, the STD96N3LLH6XRA and the STD96N3LLH6PRA.
The STD96N3LLH6 is a vertical DMOS technology transistor. It is a single-gate transistor that is designed to provide high-efficiency power conversions and better power management than previous generations. It has a high voltage rating of up to 500V and can handle up to 200A of current. Its high power rating and high efficiency make it an ideal choice for both high voltage and high power applications.
The working principle of the STD96N3LLH6 is similar to that of any other bipolar transistor. The drain-source voltage (VDS) is applied to the device while the gate-source voltage (VGS) is used to control the current flow between the drain and the source. By changing the voltage applied to the gate, the amount of current that can flow between the drain and the source can be changed. This gives the transistor its power management capabilities.
The device also has several quality assurance features, such as device passivation, which helps prevent malfunction or current leakage during operation. The device also has a reverse bias safe operating area (RBSA) which helps protect it from damage during high current surges. Finally, the device is designed to offer a long life with lower power losses, making it a more reliable long-term solution for power management.
In summary, the STD96N3LLH6 is a powerful, high-performance transistor capable of providing excellent performance for high voltage and high power applications. Its fourth-generation design allows it to offer improved efficiency and power management features, making it an ideal choice for many power applications. Its long life and reliability make it a dependable long-term solution for power management applications.
The specific data is subject to PDF, and the above content is for reference
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