STD90N03L-1

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The STD90N03L-1 is a popular Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) whose range of applications includes high-current switching and driving applications in the telecommunications, information systems, industrial and automotive electronic systems. This section will cover the application field and working principle for the STD90N03L-1.

First off, the application field for the STD90N03L-1 is diverse and can range from telecommunication, industrial and automotive electronic systems. The transistor was designed to meet the high-current demands of all of these sectors, as it can handle up to 110 Amperes (A) of drain current. The STD90N03L-1 further boasts low gate input capacitance, excellent figure-of-merit, low conductor capacitance and high avalanche energy. The STD90N03L-1 is also known for its ability to reduce electrostatic discharge, making it a durable and useful transistor.

The STD90N03L-1 is an enhancement-mode MOSFET, meaning the device can be turned on by increasing the voltage on its gate to a level that is higher than its source. The enhanced source-drain conductivity is a result of an electric field generated by the gate electrode which is therefore able to control the device\'s source-drain conductivity.

Because the device is depletion-mode, an electric field applied to the gate channel suppresses the channel’s current conduction, while increasing the gate voltage will increase the channel\'s current conduction. The STD90N03L-1 will have a positive threshold voltage up to -10V. This threshold voltage allows for the device to switch to a lower power state, resulting in reduced power consumption for the application.

The Vth is particularly interesting because it is a measure of the device’s ability to be controlled by a gate electrode. The higher the Vth voltage, the better the device can be switched on and off faster by the applied voltage. The STD90N03L-1 has a Vth of -10V, which means that it can be turned on and off within a voltage range of -10V and 0V.

The source-drain conductivity of the device is given by several parameters, namely the gate capacitance, Gate-Drain parasitic capacitance and Gate-Source parasitic capacitance. The gate capacitance of the device is determined by the size of the device, while the Gate-Drain and Gate-Source parasitic capacitance are characteristics of the device’s physical structure.

In order to minimize on-state resistance, the gate capacitance should be low and the gate-source and gate-drain capacitances should be high. To achieve a low value for the on-state resistance, the STD90N03L-1 is manufactured with an optimized gate length and modified insulator thickness.

The STD90N03L-1 has a breakdown voltage of 200V, which is a significant value as it gives the transistor a high degree of reliability and durability while allowing a high current to flow through the device. The high breakdown voltage also ensures that power dissipation losses in the device are minimized, making it an ideal choice for high-current switching applications.

Furthermore, the STD90N03L-1 has a thermal resistance of 11 °C/W and a self-heating of 0.13 K/A. This feature reduces heating-related stress from the overall system and therefore prolongs the lifecycle of the device as well as the system.

In addition to its high-performance characteristics, the STD90N03L-1 has an impressive package size of 70x10mm. This small form factor makes it an appropriate choice for mobile computing platforms, as it can fit in more cramped spaces such as hand-held devices.

To sum up, the STD90N03L-1 is a single MOSFET designed for high-current applications in telecommunication, industrial and automotive electronic systems. With a Vth of -10V, a breakdown voltage of 200V, a thermal resistance of 11 °C/W and a package size of 70x10mm, the STD90N03L-1 offers users a reliable and efficient transistor solution.

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