STH110N10F7-2 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STH110N10F7-2 is a field-effect transistor (FET), more specifically a Power MOSFET. It is part of a high-power, low-drain-to-source on-state resistance (RDS-on) family of FETs that are ideal for high-efficiency switch mode power supplies (SMPS) and other power applications. It is a typically-available type of FET, with many vendors offering the part.

Overview

STH110N10F7-2 is a Power MOSFET designed to be used as a switch in a wide range of applications, such as switching regulators, Uninterruptible Power Supplies, power supplies, motor drivers and other power electronic applications. Its low on-state resistance (RDS-on) allows high-current power switches, while its thermal design allows efficient switching applications. This type of device is known as an N-Channel enhancement-mode lateral MOSFET (nMOSFET).

Features

STH110N10F7-2 offers several features, such as:

• N-channel enhancement-mode lateral MOSFET (nMOSFET).
• Low specific on-resistance (RDS-on) of 13.0 milliohms
• Low threshold voltage (VGS(th)) of 4.0V.
• Low gate-source capacitance (CISS).
• Excellent thermal resistance.
• Operation temperature range from -55°C to +150°C.
• 100V gate-source voltage.
• Matte-tin plated lead frame.
• Silicon oxide passivated dielectric.

Applications

STH110N10F7-2 is designed for use as a switch in a variety of applications, such as:

• Power switches and motor drivers.
• SMPS and DC/DC converters.
• Uninterruptible Power Supplies (UPS).
• High-current switching applications.
• High-efficiency power applications.
• Power supplies and other automotive applications.

Working Principle

The STH110N10F7-2 is a nMOSFET, which is a type of field-effect transistor (FET) that consists of n-type source and drain regions, and a gate electrode that controls the conductivity of the channel between them. Its low threshold voltage (VGS(th)) and low RDS-on allows it to switch high currents efficiently. It works according to the following basic principles:

• The gate electrode applies an electric field to the channel between the source and drain regions.
• The applied electric field creates an inversion layer underneath the gate electrode, which modulates the conductivity of the channel.
• When the gate voltage is sufficiently high to create the inversion layer, the channel opens and current can flow between the source and drain.
• When the gate voltage is too low, the channel is completely closed, and current does not flow.

Conclusion

The STH110N10F7-2 is a high-power, low-drain-to-source on-state resistance (RDS-on) type of Power MOSFET that is ideal for efficient switch mode power supplies (SMPS) and other power applications. It is a typical available type, and offers several features such as low specific on-resistance, low threshold voltage and excellent thermal resistance. It works according to the principles of gate-source capacitance, and is suitable for use as a switch in numerous high-power applications.

The specific data is subject to PDF, and the above content is for reference