Allicdata Part #: | 497-16971-2-ND |
Manufacturer Part#: |
STH140N6F7-6 |
Price: | $ 0.75 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | N-CHANNEL 60 V, 0.0028 OHM TYP., |
More Detail: | N-Channel 60V 80A (Tc) 158W (Tc) Surface Mount H2P... |
DataSheet: | STH140N6F7-6 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.68284 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
Supplier Device Package: | H2PAK-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 158W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 10V |
Series: | STripFET™ |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STH140N6F7-6 is a N-channel MOSFET (metal–oxide–semiconductor field-effect transistor) designed for applications where high power dissipation and switching speed are required. This type of transistor is primarily used as a switch, similar to the way a light switch changes the flow of electricity in a circuit. Unlike a traditional mechanical switch, however, the MOSFET operates with very small currents on a microscopic level.
The STH140N6F7-6 is a planar type MOSFET with a silicon substrate, making it ideal for applications where a small package size is required. The transistor has a very low gate voltage threshold and an exceptionally low on-resistance, allowing it to quickly and efficiently switch large loads, even at low voltages. The maximum source-drain voltage rating is 80 volts, and the maximum drain current is 140 amps.
The STH140N6F7-6 MOSFET works on the principle of carrier depletion and accumulation when the gate voltage is applied. When the gate voltage is off, the transistor is in off-state, and when the gate voltage is on, the transistor is in on-state. When the gate voltage is positive, the depletion region at the source-drain boundary expands, blocking the current flow through the channel. When the gate voltage is negative, the depletion region contracts and the channel opens, allowing electrons to flow. This action is known as channel-controlled conductance.
The STH140N6F7-6 is ideal for switching applications such as high-current DC loads, power conversion, motor control, and audio amplifiers. It is also well suited for low-noise preamplifiers, high-efficiency switching-mode power supplies, and low-voltage logic circuits. The low gate current and low on-resistance of the device enable very low power dissipation, making it particularly suitable for portable and battery-operated devices.
In summary, the STH140N6F7-6 is a low-threshold, low-voltage N-channel MOSFET designed for high-power applications requiring high switching speed and low power dissipation. It is capable of switching relatively large loads with low gate voltages, making it well suited for low-voltage and portable applications.
The specific data is subject to PDF, and the above content is for reference
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