Allicdata Part #: | 497-14979-2-ND |
Manufacturer Part#: |
STH150N10F7-2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 100V 90A H2PAK-2 |
More Detail: | N-Channel 100V 110A (Tc) 250W (Tc) Surface Mount H... |
DataSheet: | STH150N10F7-2 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | H2Pak-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8115pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 117nC @ 10V |
Series: | DeepGATE™, STripFET™ VII |
Rds On (Max) @ Id, Vgs: | 3.9 mOhm @ 55A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STH150N10F7-2 is a type of switch transistor which falls in the category of field-effect transistors (FETs) and metal-oxide-semiconductor FETs (MOSFETs). It is a single n-channel device, which is able to withstand high voltages of up to 150 volts (V). It is designed for switching applications and is capable of operating over a wide range of temperatures, from -55°C to +150°C.
A FET is a type of transistor that utilises electric charges and voltages to control the flow of current in a circuit. These devices are very popular in modern electronics due to their low power consumption, high level of reliability and small footprint. The STH150N10F7-2 is no exception, due to the voltage and temperature ratings it is suitable for use in many high-power applications.
The STH150N10F7-2 is a 2-pin device; the drain is the first pin and the source is the second. The source pin is connected to the circuit load, while the drain is connected to the power supply. When a voltage is applied to the gate, a depletion layer is created which restricts current through the device, turning it off and preventing current from passing through. When the voltage on the gate is reduced, the current is free to pass and the device is turned on.
The STH150N10F7-2 can be used in a variety of applications. It is widely used in switching circuits such as power supplies, motor speed control systems, and other high-power switching applications. It is also suitable for use in automotive systems, where its high temperature and voltage rating make it a suitable candidate for any high voltage application. In addition, it can also be used in high-frequency switching circuits, and junction field-effect transistors (JFETs), where its low on-resistance and low power consumption make it a great choice for these systems.
The STH150N10F7-2 is a very versatile switch transistor, and can be utilised in a variety of applications. Its temperature and voltage ratings make it suitable for high voltage, high temperature applications; while its low on-resistance and low power consumption make it ideal for use in high-frequency switching circuits and junction field-effect transistors. Thus, it is a great choice for any high-power switching application, and with its wide range of applications, it is sure to be a reliable and successful part for any engineer to use.
The specific data is subject to PDF, and the above content is for reference
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