STH180N10F3-2 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	H2Pak-2
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	315W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6665pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	114.6nC @ 10V
Series:	STripFET™ III
Rds On (Max) @ Id, Vgs:	4.5 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	180A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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STH180N10F3-2 is a type of Field Effect Transistor (FET). It belongs to the Single category of MOSFETs and its applications range from automotive to consumer electronics.A FET is a class of transistor that acts as a semi-conductor by controlling current flow through the application of a potential difference across the gate-source terminals. It is controlled by the electric field generated by applying a voltage between the gate and source terminals. This is the basis of the operation of a FET, which allows it to be used in a variety of switch and amplifier applications. The STH180N10F3-2 is a N-channel, enhancement mode MOSFET. This type of transistor has an additional layer deposited on the substrate which allows a greater current to flow between the drain and source when the gate voltage is increased. It is typically used in applications such as AC/DC switched-mode power supplies, motor speed control, and switching applications. This FET is optimized for very low on-resistance and high transconductance, allowing for very high-efficiency switch and amplifier applications. Its maximum drain current of 180mA allows for a very high-power handling capability. The STH180N10F3-2 is also rated for a very high voltage of 100V, allowing it to be used in voltage-regulator applications. The STH180N10F3-2 is a very useful FET for a variety of applications. Its low gate threshold voltage allows for easy switching and its high current capabilities allow for very high power operation. It is an efficient and reliable way to achieve circuit switching and amplification. The STH180N10F3-2 is a highly efficient FET that is used in a variety of applications ranging from automotive to consumer electronics. It is optimized for low on-resistance and high transconductance, allowing for very high-efficiency switch and amplifier applications. Its high current rating, low gate threshold voltage, and high voltage rating make it a great choice for reliable circuit switching and amplification. It is a must-have component for power control and switching applications.

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