STH140N8F7-2 Discrete Semiconductor Products |
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Allicdata Part #: | 497-14534-2-ND |
Manufacturer Part#: |
STH140N8F7-2 |
Price: | $ 1.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 80V 90A H2PAK-2 |
More Detail: | N-Channel 80V 90A (Tc) 200W (Tc) Surface Mount H2P... |
DataSheet: | STH140N8F7-2 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.34800 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | H2Pak-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6340pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 96nC @ 10V |
Series: | DeepGATE™, STripFET™ VII |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 45A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STH140N8F7-2 is a high voltage FET device that has been designed to operate over an input voltage range of 6 to 20 volts. This device is best suited for applications which require low power, high speed, and robust operation. The STH140N8F7-2 is a single N-channel FET device which is typically used in applications such as LED drivers, motor drivers, and switch-mode power supplies. The device can also be used in high frequency switching applications, as well as voltage regulators.
The working principle of the STH140N8F7-2 is that it is a voltage controlled device. When a gate voltage is applied, it changes the conductance of the device, allowing current to flow from the source to the drain. As the voltage is increased, more current is allowed to flow through the device, resulting in a higher current carrying capacity. The drain-source characteristics of the device can also be adjusted by altering the gate voltage. The higher the gate voltage, the lower the on-state resistance of the device.
The STH140N8F7-2 can be used in a variety of applications. It is ideal for power converters, such as low-voltage switch-mode power supplies and LED drivers. The device is suitable for high frequency switching applications, and can also be used in voltage regulators, as it offers low on-state resistance and low gate charge.
The STH140N8F7-2 also has a number of advantages, such as its excellent ESD protection. This allows for reliable operation, even in harsh environments, and ensures that the device does not suffer from any damage due to electrostatic discharge. The device also has a low gate-to-source capacitance, meaning that it does not distort the input signal and can be used in high speed applications. Finally, the device has a relatively low power consumption, allowing it to operate efficiently.
In conclusion, the STH140N8F7-2 is a highly versatile FET suitabled for a variety of applications. It is a single N-channel FET device designed to operate over an input voltage range of 6 to 20 volts, and offers low power consumption, low gate charge, and excellent ESD protection. It is best suited for applications which require low power, high speed, and robust operation, such as LED drivers, motor drivers, and switch-mode power supplies.
The specific data is subject to PDF, and the above content is for reference
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