Allicdata Part #: | 497-13091-2-ND |
Manufacturer Part#: |
STH130N10F3-2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 100V 120A H2PAK-2 |
More Detail: | N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount H... |
DataSheet: | STH130N10F3-2 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | H2Pak-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3305pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 57nC @ 10V |
Series: | STripFET™ III |
Rds On (Max) @ Id, Vgs: | 9.3 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
STH130N10F3-2 is a type of insulated gate bipolar transistor (IGBT) which is a positive temperature coefficient (PTC) insulated gate field-effect transistor (MOSFET). It is a three-terminal device that consists of an insulated gate, an N-type source, and an N-type drain. IGBTs are often used in applications where high power densities, fast switching speeds, and low on-state voltage drops are desired.
The primary application field of STH130N10F3-2 are automotive systems, power electronics, servo drives and variable speed applications. Automotive systems use IGBTs as switches to drive electric motors, provide power control and protection, and as voltage regulators. In power electronics, IGBTs are used to provide high voltage power control and protection. In servo drives and variable speed applications, IGBTs are used to control the speed and direction of motors.
The STH130N10F3-2 has the following working principle. It works by allowing a small current to flow between the source and drain terminals. When a positive voltage is applied to the gate terminal, a positive charge from the gate is attracted to the P-type layer below the oxide layer, which increases the conductivity of the device. As the voltage across the source and drain terminals increases, the current increases in a linear fashion. The stronger the voltage applied to the gate, the higher the current which can flow between the source and drain terminals.
At the same time, the current will be limited by the tension force between the gate and the P-type layer. This tension force determines the current the IGBT can handle. When the voltage across the source and drain terminals is increased to the maximum voltage the device can handle, the current will be limited by this force, thus limiting the power the IGBT can handle. The gate voltage must remain constant in order to keep the maximum current value constant.
In summary, STH130N10F3-2 is an insulated gate bipolar transistor that is useful for automotive systems, power electronics, servo drives and variable speed applications. It works by allowing a small current to flow between the source and drain terminals when a positive voltage is applied to the gate terminal. The maximum current that can be handled is limited by the tension force between the gate and the P-type layer, and the gate voltage must remain constant to keep this current constant.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
STH130N8F7-2 | STMicroelect... | 0.81 $ | 1000 | MOSFET N-CH 80V 110A H2PA... |
STH180N4F6-2 | STMicroelect... | 0.96 $ | 1000 | MOSFET N-CH 40V 120A H2PA... |
STH130N10F3-2 | STMicroelect... | -- | 1000 | MOSFET N-CH 100V 120A H2P... |
STH140N6F7-2 | STMicroelect... | 1.04 $ | 1000 | MOSFET N-CH 60V 80A H2PAK... |
STH15NB50FI | STMicroelect... | 0.0 $ | 1000 | MOSFET N-CH 500V 10.5A IS... |
STH110N10F7-6 | STMicroelect... | -- | 1000 | MOSFET N-CH 100V 110A H2P... |
STH12N120K5-2 | STMicroelect... | 4.49 $ | 1000 | MOSFET N-CH 1200V 12A H2P... |
STH110N7F6-2 | STMicroelect... | 0.36 $ | 1000 | MOSFET N-CH 68V 80A H2PAK... |
STH110N10F7-2 | STMicroelect... | 1.11 $ | 1000 | MOSFET N CH 100V 110A H2P... |
STH150N10F7-2 | STMicroelect... | -- | 1000 | MOSFET N-CH 100V 90A H2PA... |
STH180N10F3-6 | STMicroelect... | 0.0 $ | 1000 | MOSFET N-CH 100V 180A H2P... |
STH160N4LF6-2 | STMicroelect... | 0.0 $ | 1000 | MOSFET N-CH 40V 120A H2PA... |
STH175N4F6-2AG | STMicroelect... | -- | 1000 | MOSFET N-CH 40V 120A H2PA... |
STH140N6F7-6 | STMicroelect... | 0.75 $ | 1000 | N-CHANNEL 60 V, 0.0028 OH... |
STH175N4F6-6AG | STMicroelect... | 0.76 $ | 1000 | MOSFET N-CH 40V 120A H2PA... |
STH145N8F7-2AG | STMicroelect... | -- | 1000 | MOSFET N-CH 80V 90AN-Chan... |
STH185N10F3-6 | STMicroelect... | 2.0 $ | 1000 | MOSFET N-CH 100V 180A H2P... |
STH185N10F3-2 | STMicroelect... | 2.0 $ | 1000 | MOSFET N-CH 100V 180A H2P... |
STH13009 | STMicroelect... | 0.0 $ | 1000 | TRANS NPN 400V 12A TO-220... |
STH180N10F3-2 | STMicroelect... | 2.29 $ | 1000 | MOSFET N-CH 100V 120A H2P... |
STH170N8F7-2 | STMicroelect... | 1.01 $ | 1000 | MOSFET N-CH 80V 120AN-Cha... |
STH140N8F7-2 | STMicroelect... | 1.48 $ | 1000 | MOSFET N-CH 80V 90A H2PAK... |
STH110N8F7-2 | STMicroelect... | 0.54 $ | 1000 | MOSFETN-Channel 80V 110A ... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...