STH130N10F3-2 Allicdata Electronics
Allicdata Part #:

497-13091-2-ND

Manufacturer Part#:

STH130N10F3-2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 100V 120A H2PAK-2
More Detail: N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount H...
DataSheet: STH130N10F3-2 datasheetSTH130N10F3-2 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: H2Pak-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3305pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Series: STripFET™ III
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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STH130N10F3-2 is a type of insulated gate bipolar transistor (IGBT) which is a positive temperature coefficient (PTC) insulated gate field-effect transistor (MOSFET). It is a three-terminal device that consists of an insulated gate, an N-type source, and an N-type drain. IGBTs are often used in applications where high power densities, fast switching speeds, and low on-state voltage drops are desired.

The primary application field of STH130N10F3-2 are automotive systems, power electronics, servo drives and variable speed applications. Automotive systems use IGBTs as switches to drive electric motors, provide power control and protection, and as voltage regulators. In power electronics, IGBTs are used to provide high voltage power control and protection. In servo drives and variable speed applications, IGBTs are used to control the speed and direction of motors.

The STH130N10F3-2 has the following working principle. It works by allowing a small current to flow between the source and drain terminals. When a positive voltage is applied to the gate terminal, a positive charge from the gate is attracted to the P-type layer below the oxide layer, which increases the conductivity of the device. As the voltage across the source and drain terminals increases, the current increases in a linear fashion. The stronger the voltage applied to the gate, the higher the current which can flow between the source and drain terminals.

At the same time, the current will be limited by the tension force between the gate and the P-type layer. This tension force determines the current the IGBT can handle. When the voltage across the source and drain terminals is increased to the maximum voltage the device can handle, the current will be limited by this force, thus limiting the power the IGBT can handle. The gate voltage must remain constant in order to keep the maximum current value constant.

In summary, STH130N10F3-2 is an insulated gate bipolar transistor that is useful for automotive systems, power electronics, servo drives and variable speed applications. It works by allowing a small current to flow between the source and drain terminals when a positive voltage is applied to the gate terminal. The maximum current that can be handled is limited by the tension force between the gate and the P-type layer, and the gate voltage must remain constant to keep this current constant.

The specific data is subject to PDF, and the above content is for reference

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