STH170N8F7-2 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	H2Pak-2
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	250W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8710pF @ 40V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	120nC @ 10V
Series:	STripFET™ F7
Rds On (Max) @ Id, Vgs:	3.7 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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STH170N8F7-2 Application Field and Working Principle

STH170N8F7-2 is a field effect transistor (FET) belonging to the Metal Oxide Semiconductor FET (MOSFET) classification and is a single type. STH170N8F7-2 is designed to be an efficient, low-power, high-performance switching and amplifier device that has been tested and found to be operationally reliable in a variety of application areas.The STH170N8F7-2 is a P-channel MOSFET that is used to provide control and isolation between the input and output of a circuit. The device is capable of switching up to 60V and 5A of current and is operating over a temperature range of -55 to 150℃. It features excellent EN/DWN body diode characteristics, eliminating the need for additional diodes in most applications.The device is typically operated as a digital switch, where low current is required to turn the device on (gate voltage on) and high current is required to turn the device off (gate voltage off). The current flow is based on the gate voltage (Vgs) and the drain-to-source voltage (Vds).The device has a built-in body diode (B-D) and an internal drain-source diode (D-S) that enable the device to be used as a rectifier when needed. This allows the device to offer protection against voltage transients in a circuit.The STH170N8F7-2 is available in a variety of packaging options, making it a very versatile device that can be used in a variety of applications. The main application areas for the STH170N8F7-2 are in Low Voltage Switches (LVS), Automotive Switches, Inductive Loads, LED Lighting, PC Board Assembly, and Board-Level Testing.In addition to its excellent performance characteristics, the device also features a low static on-resistance (RDS(on)) and series resistance (Rdson) characteristics. This enables the device to be used to control large currents with minimum losses.The on-off states of the device can be controlled by applying the correct gate voltage and it is this gate voltage that determines the current flow through the device. To turn the device on, a voltage higher than the device\'s threshold voltage must be applied to the gate. When this is done, current will flow from drain to source, allowing the device to switch.The device can be used in a multitude of applications to control current, voltage and power. Some of the common uses of the STH170N8F7-2 include drive stage switching in DC-DC converters, power supplies, and level shifting in audio systems.The STH170N8F7-2 is especially useful for high power applications due to its excellent operating temperature range, high and low voltage breakdown characteristics, low on-state resistance, built-in body diode, excellent static and dynamic dV/dt characteristics, and fast switching time.In conclusion, the STH170N8F7-2 is a versatile device that has been tested and found to be both reliable and efficient in a variety of applications. Its low power, high switching, and amplifier capabilities make it an ideal device for a multitude of applications, ranging from low voltage switches to automotive switches and even high power applications. The integrated body diode and the fast switching time combined with the low static on-resistance make the device attractive for many applications where high power is a necessity.

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