STH110N8F7-2

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The STH110N8F7-2 is one of the most popular from a long list of Field Effect Transistors (FETs), commonly called MOSFETs. These transistors are extremely versatile, making them ideal for a variety of applications. This article will explore the STH110N8F7-2\'s application field and working principle.

Types of FET

Before delving into the STH110N8F7-2\'s specifics, a brief introduction to the different types of FET is helpful. FETs are divided into two types: unipolar and bipolar. Unipolar transistors typically feature n-channel and p-channel types, whereas bipolar transistors are typically of the junction type. Unipolar transistors are further classified as either junction or insulated gate devices. The STH110N8F7-2 is an example of an insulated gate device, specifically a single FET (SFET).

Overview of the STH110N8F7-2

The STH110N8F7-2 is an insulated gate FET with a moderate drain-source voltage (Vds) of 100V, making it suitable for a variety of applications. This type of FET also features a maximum drain current (Id) of 80A, as well as a low on-resistance of 0.12mΩ. Additionally, the STH110N8F7-2 is rated to operate at temperatures ranging from -55°C to +150°C, therefore providing a high degree of flexibility for use in a number of applications.

Applications of the STH110N8F7-2

The STH110N8F7-2 is commonly used for power management applications such as providing power switching, voltage regulation, and current limiting. These FETs are also widely used in automotive applications, including engine management and controllers. Due to their wide temperature range, they are also popular in industrial applications, often being used as contactors in motor controls.

The STH110N8F7-2 can also be used in audio applications, most often as drivers for amplifier circuits, as they are able to handle high amounts of power without compromising performance.

Working Principle

At a basic level, FETs operate on a simple principle. When a small voltage is applied to the gate of the transistor, it effectively ‘opens the door’ to the underlying channel, allowing current to flow from the drain to the source. This operation is known as ‘enhancement’. Conversely, when the gate voltage is raised above a certain threshold, the transistor is effectively ‘closed’, preventing current from flowing and inhibiting current flow.

The STH110N8F7-2, as with all FETs, contains three terminals: the gate, source, and drain, as well as an internal channel connecting the first two. When a voltage is applied to the gate, a “channel” is created between the source and the drain, allowing current to flow. This current is modulated by the Voltage applied to the Gate, creating the “on-off” effect.

Conclusion

In conclusion, the STH110N8F7-2 is a widely used FET which is capable of a variety of applications, including power management, motor control, and audio. It is an insulated gate device with a moderate drain-source voltage, a high drain current, and a low on-resistance. The STH110N8F7-2 works on the principle of controlling current flow by modulating the gate voltage, allowing for the “on-off” effect.

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