STH140N6F7-2 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	H2Pak-2
Mounting Type:	Surface Mount
Operating Temperature:	175°C (TJ)
Power Dissipation (Max):	158W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2700pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	40nC @ 10V
Series:	DeepGATE™, STripFET™ VII
Rds On (Max) @ Id, Vgs:	3 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction of STH140N6F7-2

The STH140N6F7-2 is a high-voltage, non-polar, N-channel digital power MOSFET from STMicroelectronics. This MOSFET is suitable for a wide range of high voltage power applications, such as charging and unloading, motor control and power switching.

Application Field of STH140N6F7-2

STON140N6F7-2 is mainly used in high voltage power applications. It can be used to charge and unload various applications, such as air conditioners, washing machines and electric vehicles that require high power switching. In addition, it can also be used to regulate and reduce the power of motors in applications such as car cooling fans and pumps, resulting in a stable and energy-saving operation of the motor.

Working Principle of STH140N6F7-2

The STH140N6F7-2 is an N-channel MOSFET, which means it is formed by connecting an N-type silicon material between two metal contacts, known as the source and the drain. The MOSFET also includes a gate contact which is not connected to the N-type silicon material. This gate contact is used to control the conduction of current between the source and the drain.When a voltage is applied to the gate contact, it creates an electric field that pulls charge carriers from the N-type silicon material and into the gate contact. This increases the resistance between the source and the drain and prevents current conduction. When the voltage is removed, the charge carriers return to the N-type material, reducing the resistance and allowing current to flow between the source and the drain.This basic circuit principle is widely used in power regulating and switching applications, such as the STH140N6F7-2, as it allows the device to quickly handle large amounts of current. Furthermore, this fast response time reduces switching losses and ensures the MOSFET operates more efficiently when controlling motors and other power switching applications.

Conclusion

The STH140N6F7-2 is a high voltage, non-polar, N-channel digital power MOSFET from STMicroelectronics. This MOSFET is suitable for a wide range of high voltage power applications, such as charging and unloading, motor control and power switching. Its fast switching times and efficient operation makes it an ideal choice for controlling large currents.

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