Allicdata Part #: | 497-15425-2-ND |
Manufacturer Part#: |
STH12N120K5-2 |
Price: | $ 4.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 1200V 12A H2PAK-2 |
More Detail: | N-Channel 1200V 12A (Tc) 250W (Tc) Surface Mount H... |
DataSheet: | STH12N120K5-2 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 4.07564 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | H2Pak-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1370pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 44.2nC @ 10V |
Series: | MDmesh™ K5 |
Rds On (Max) @ Id, Vgs: | 690 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Introduction
The STH12N120K5-2 is a high-efficiency, high-power, and high-current short-channel power MOSFET designed for consistent high performance and reliability for a variety of applications. As a member of ST\'s STripFET™ MOSFET technology family, STH12N120K5-2 boasts superb electrical and switching characteristics with exceptionally low gate charge and low parasitic capacitances.
Application Field
The STH12N120K5-2 is a power MOSFET used in high-power electronics. It is capable of switching voltages as high as 600V and currents up to 482A, making it suitable for use in various power applications such as power converters, motor controllers, and renewable energy systems. It is also well-suited for use in industrial, automotive, and other heavy-duty applications.
Working Principle
The STH12N120K5-2 is a silicon-based power MOSFET that uses a metal-oxide-semiconductor (MOS) gate structure and a short channel MOSFET design to achieve fast switching operation. By utilizing a highly efficient drain-source current flow, this MOSFET design takes advantage of low on-resistance and low gate charge characteristics to increase efficiency. As a result, it improves conduction performance and significantly reduces switching losses.
The STH12N120K5-2\'s gate structure is designed to facilitate low-milivolt (mV) switching. This allows the MOSFET to switch quickly, enabling it to rapidly turn on, turn off, and vary its operating voltage. Its flexibility allows it to be used in a wide range of power applications and is especially useful for applications that require fast switching such as motor control and solar micro-inverter applications.
Conclusion
The STH12N120K5-2 is a power MOSFET that is capable of withstanding high power levels and is highly efficient. Its short-channel MOSFET design and low gate charge characteristics enable it to be used in power-critical applications such as motor control, renewable energy systems and industrial automation. With its exceptional switching performance and low-mV switching capability, the STH12N120K5-2 is an ideal choice for a variety of power electronics applications.
The specific data is subject to PDF, and the above content is for reference
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