STH110N7F6-2

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The STH110N7F6-2 is a power MOSFET (metal–oxide–semiconductor field-effect transistor) that is known for its high performance and low on-resistance ratings. It is a single-channel device, meaning it has a single source, gate, and drain. This particular device is often used in high current power applications, such as automotive, military, industrial, and consumer applications.

The device is a depletion-mode MOSFET, meaning its normally turned off and requires the gate voltage to be increased to turn it on. It has a nominal drain-source voltage adaptation of 500V, a drain current of 110A, and a maximum drain-source on-resistance of 7.6mΩ.

The STH110N7F7-2’s drain-source voltage adaptation is determined by the gate-source voltage and its on-resistance by the gate-drain voltage. It will conduct current from source to drain when the gate-source voltage is greater than the threshold voltage and when the gate-drain voltage is below the gate-drain breakdown voltage. When either of these conditions is not met, the device will cease to conduct.

In most applications, the gate voltage has to be increased to turn the device on and then reduced to turn it off. This can be done manually or automatically, depending on the application. It is important to note that high voltages can damage the device and should be avoided. It is also important to consider the application’s power dissipation and junction temperature requirements in order to ensure optimal performance.

It is also important to note that, while the STH110N7F6-2 can handle a wide range of current levels, it is not intended for continuous use. Before using the device for continuous use, it should be tested in the application itself to ensure that it performs as expected.

The STH110N7F6-2 is a versatile device that can be used in a wide variety of applications. Its high on-resistance rated and low drain-source voltage adaptation make it an ideal choice for high current applications. Its depletion-mode operation ensures that the device is off until it is activated, and its manual or automatic gate control makes it even more convenient to use. With proper consideration of power dissipation and junction temperature requirements, the STH110N7F6-2 can provide reliable, efficient performance in a variety of applications.

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