STH160N4LF6-2 Discrete Semiconductor Products |
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Allicdata Part #: | 497-15466-2-ND |
Manufacturer Part#: |
STH160N4LF6-2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 40V 120A H2PAK-2 |
More Detail: | N-Channel 40V 120A (Tc) 150W (Tc) Surface Mount H2... |
DataSheet: | STH160N4LF6-2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | H2Pak-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8130pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 181nC @ 10V |
Series: | DeepGATE™, STripFET™ VI |
Rds On (Max) @ Id, Vgs: | 2.2 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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STH160N4LF6-2 is a high-level power field-effect transistor (FET) that is widely used in a variety of applications in power electronic systems. It is a single n-type enhancement-mode FET that is optimized for switching applications between a supply voltage of 20V and a drain current of 60A. As the name suggests, it is optimally suited for high voltage switching applications. The device is also effective for driving higher capacitive or inductive loads.
This FET consists of a single n-type MOSFET with a very low on-resistance, making it suitable for a wide range of switching applications. The low on-resistance of the FET ensures that it can handle high switching frequencies and power densities, making it suitable for applications such as high power motor control, where it is ideally suited for controlling the speed and torque of a large electric motor. Additionally, the STH160N4LF6-2 FET is also suitable for use in grid conversion and battery charging applications.
In terms of the device\'s working principle, the FET can be thought of as a voltage-controlled switch. This means that, when a certain amount of voltage is applied to the gate of the FET, a channel of electrons is formed between the drain and source. When the drain-source voltage is increased, the channel is increased, allowing more current to flow through it. This current can be then used to drive an external load, such as a motor or a solenoid.
To optimize the performance of the FET, it is important to pay attention to the design of the gate/source voltage, as well as the size of the source-drain voltage. When the source-drain voltage is increased, the switching speed of the FET is improved, which helps to reduce losses and improve overall efficiency. Conversely, when the gate-source voltage is increased, the RDS(on) of the FET is decreased, allowing for greater current handling and switching speed.
The STH160N4LF6-2 FET is a great choice for applications where an efficient and reliable switching solution is needed. Its low on-resistance, high-current handling capabilities, and low-power switching needs make it ideally suited for applications in high-power motor control, grid connection, and battery charging.
The specific data is subject to PDF, and the above content is for reference
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