STH175N4F6-2AG Allicdata Electronics

STH175N4F6-2AG Discrete Semiconductor Products

Allicdata Part #:

497-15467-2-ND

Manufacturer Part#:

STH175N4F6-2AG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 40V 120A H2PAK-2
More Detail: N-Channel 40V 120A (Tc) 150W (Tc) Surface Mount H2...
DataSheet: STH175N4F6-2AG datasheetSTH175N4F6-2AG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: H2Pak-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7735pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: Automotive, AEC-Q101, STripFET™ F6
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STH175N4F6-2AG is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for the special requirements of a variety of applications. The STH175N4F6-2AG is excellent for use in high-current, high-power applications such as audio power amplifiers, automotive electronics, and wind turbine and solar power systems.

As with any MOSFET, a STH175N4F6-2AG is a three-terminal device consisting of source, drain, and gate electrodes. The STH175N4F6-2AG is a single device, meaning it is designed to control current in one direction. In many cases, the device can also be used to control current in both directions.

When a small voltage is applied to the gate, current can flow between the source and the drain. This is the basic working principle of MOSFETs, and it is the same with the STH175N4F6-2AG. This allows the device to be used as a switch, allowing it to be used as a switch in electronic circuits.

The STH175N4F6-2AG is a high-efficiency device that has excellent performance in a variety of applications. It is designed for high current and high power applications, with current-handling capability of up to 175A, and a drain-source voltage of up to 200V. The device has a low on-resistance and fast switching speed, making it well-suited for AC and DC switching applications. In addition, the device has an extremely low gate-source capacitance, allowing it to be used in noise-sensitive applications.

The STH175N4F6-2AG is used in a variety of applications including audio power amplifiers, automotive electronics, and wind and solar power systems. In audio power amplifiers, the device is used to provide large amounts of current at high voltages, and is often used in high-power Class-D amplifiers. In automotive electronics, the device is preferred for its fast switching characteristics and high current-handling capability. In solar and wind power systems, the STH175N4F6-2AG is used to handle large currents and voltages, allowing increased energy efficiency.

In summary, the STH175N4F6-2AG is a MOSFET designed for high-power, high-current applications. The device has a low on-resistance and fast switching speed, making it ideal for AC and DC switching applications. In addition, the device has an extremely low gate-source capacitance, allowing it to be used in noise-sensitive applications. The STH175N4F6-2AG is commonly used in audio power amplifiers, automotive electronics, and wind and solar power systems.

The specific data is subject to PDF, and the above content is for reference

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