STH180N10F3-6 Discrete Semiconductor Products

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The STH180N10F3-6 is a MOSFET transistor and it belongs to the single category of FETs. It comes with many features for various applications. The device is a N-channel MOSFET and its drain-source voltage range is from 15V to 60V.

The STH180N10F3-6 has a drain current rating of 18.0A and can handle a peak current up to 120A. It also comes with a low gate threshold and an RDS(ON) which is 25 milliohms at VGS of 10V. The device is analog switch optimized with very low switching times and is suitable for high-speed, high-current switch applications.

It is commonly used in applications such as power management and light-load control. It can also be used in battery management and in other applications where there is a need to switch high current, while remaining cost effective.

The STH180N10F3-6 can operate from -55°C to +125°C and is built using a power Dual-N-Channel MOSFET technology, with a planar cell structure. The device also features a low on-resistance, low gate charge and low capacitance, making it well suited for various applications. The device is also RoHS and EuP compliant.

The working principle of the STH180N10F3-6 is based on the operation of an N-channel MOSFET. It works when a voltage is applied to the gate, which creates a channel in the N-type MOSFET material. This channel provides a conducting path between the source and the drain and as the voltage is applied, current is able to flow. This current flow is controlled by the gate voltage and is used to switch signals in many applications.

The STH180N10F3-6 is designed to operate in low and medium voltage applications. It can be used in high side and low side control applications, and it is suitable for use in battery powered applications. It is well suited for applications such as high speed switching and power management, where low on-resistance and high speed switching is required.

In summary, the STH180N10F3-6 belongs to the single category of FETs and it is a N-channel MOSFET transistor. It is commonly used for various applications such as power management and light-load control, and features high current handling capabilities and low gate charge. Its working principle is based on the N-channel MOSFET operation and it is used to switch signals in many applications.

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