STH180N4F6-2

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The STH180N4F6-2 is a N-channel enhancement-mode, tall-level-shifted field-effect transistor (FET) specifically designed for high power switching applications. It is suitable for switch mode power supplies, high-speed power switching, DC/DC converters, and other related applications requiring high power, high efficiency and high switching speeds. This device combines both current-sensing and thermal-sensing functions. The current-sensing circuit works by monitoring the inter-drain current, while the thermal-sensing circuit monitors the temperature of the transistor.

This device utilizes a novel N-channel high voltage FET process designed with an advanced high-contrast gate oxide, which offers superior performance for a wide range of applications. It is constructed of a silicon-based semiconductor material with a planar gate oxide on top and a thermal oxide underneath it, greatly reducing leakage currents. It has a high breakdown voltage and low gate charge. The STH180N4F6-2 has a breakdown voltage rating of 175 V and a gate-source leakage current rating of 6 μA.

The STH180N4F6-2 can be used in a wide variety of applications where power level requirements are above 75 watts. It is well suited for switching DC to DC converters and other switching power supplies. It is also suitable for applications in consumer electronics, home appliances, computer and peripherals, industrial control and automation, office automation and medical equipment.

In terms of its working principle, this device is designed with a gate control voltage that controls the drain current. When the gate voltage is applied to the gate, the drain current flows through the device. It has an internal charge that helps establish the gate voltage, as well as an internal resistance that helps maintain the current. When the gate voltage is set at the proper level, the device can achieve high levels of conduction. This device is also temperature compensated, which helps it respond quickly and accurately to changes in temperature, making it ideal for switching applications.

The STH180N4F6-2 has many advantages, such as low gate charge, low gate-to-drain capacitance and high peak current capability. It is also designed with a low temperature coefficient, so it can handle high switching speeds. Additionally, its thin thermal oxide layer helps reduce leakage currents and increases its reliability. This device is RoHS compliant and is qualified to AEC-Q100 Grade-2 stress test specifications.

In conclusion, the STH180N4F6-2 is an advanced N-channel enhancement-mode tall-level-shifted field-effect transistor, which can be used for a wide range of high power switching applications. It is suitable for DC/DC converters and switch mode supplies. It is designed with an advanced high-contrast gate oxide, and features a high breakdown voltage and low gate charge. Additionally, the device is temperature compensated and RoHS compliant, making it an excellent choice for applications that require high power, high efficiency and high switching speeds.

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