Allicdata Part #: | 497-2783-5-ND |
Manufacturer Part#: |
STH15NB50FI |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 10.5A ISOWAT218 |
More Detail: | N-Channel 500V 10.5A (Tc) 80W (Tc) Through Hole IS... |
DataSheet: | STH15NB50FI Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | ISOWATT-218-3 |
Supplier Device Package: | ISOWATT-218 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 80W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3400pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Series: | PowerMESH™ |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STH15NB50FI is a single n-channel field-effect transistor (FET) that is widely used in many applications due to its exceptional electrical performance and outstanding reliability. FETs are used to amplify, control, and switch electronic signals in a variety of different systems and applications.
Introduction
FETs are three-terminal devices used to amplify, control, or switch electronic signals. They are composed of an insulated gate and are often made from semiconductor materials such as silicon (Si) or gallium arsenide (GaAs). Compared to other types of transistors, FETs offer superior speed, output on/off voltage control, power efficiency, and noise immunity. As a result, they are used in a variety of electronic applications today.
The STH15NB50FI is an n-channel FET manufactured by STMicroelectronics. It is designed to provide reliable, high-performance amplification and switching in a variety of applications. The device is available in a TO-220 package and is characterized by a voltage rating of 150 V and a drain-source current rating of 50 A.
Application Field and Working Principle
The STH15NB50FI is used in a wide range of applications, including telecommunications, robotics, UPS, power supplies, server power, and industrial controllers. It is capable of withstanding high operating temperatures of up to 175° C, making it suitable for use in harsh industrial environments. Additionally, the device is suitable for use in high-frequency switching applications due to its exceptionally low on-resistance.
The STH15NB50FI operates by controlling the flow of electric current between its source and drain terminals. When a voltage is applied to the gate terminal, which acts as an electronic switch, a current is allowed to flow through the device, depending on the charge of the gate. This means that an amplified or switched current can be produced through the device, depending on the signal applied to the gate terminal.
The STH15NB50FI is typically used in a linear or switching configuration, depending on the application. In a linear configuration, the device is used like a variable resistor, allowing for greater current flow through the device as the gate voltage is increased. In a switching configuration, the device is used to generate a high-on/low-off voltage to switch electric signals from device to device.
Advantages
The STH15NB50FI offers a number of advantages over other types of transistors, including:
- High-voltage rating: The device has a voltage rating of 150 V and a drain-source current rating of 50 A, allowing it to handle high-voltage applications.
- High-temperature capability: The device is capable of operating in high-temperature environments of up to 175° C. This makes it suitable for use in harsh industrial environments.
- Low on-resistance: The device has an exceptionally low on-resistance, making it suitable for use in high-frequency switching applications.
Conclusion
The STH15NB50FI is an advanced single n-channel FET, providing reliable, high-performance amplification and switching in a variety of applications. The device is characterized by a high-voltage rating, high-temperature capability, and low on-resistance, making it suitable for a wide range of different applications. In addition, the device is designed to withstand the stringent requirements of harsh industrial environments.
The specific data is subject to PDF, and the above content is for reference
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