STP100N10F7 Allicdata Electronics
Allicdata Part #:

497-13550-5-ND

Manufacturer Part#:

STP100N10F7

Price: $ 1.98
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N CH 100V 80A TO-220
More Detail: N-Channel 100V 80A (Tc) 150W (Tc) Through Hole TO-...
DataSheet: STP100N10F7 datasheetSTP100N10F7 Datasheet/PDF
Quantity: 1000
1 +: $ 1.98000
10 +: $ 1.92060
100 +: $ 1.88100
1000 +: $ 1.84140
10000 +: $ 1.78200
Stock 1000Can Ship Immediately
$ 1.98
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4369pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Series: DeepGATE™, STripFET™ VII
Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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An STP100N10F7 is a field-effect transistor (FET) designed to work with both high and low power operations. This high power FET is a N-channel 100V 10A device with a a very low gate to source capacitance. The STP100N10F7 is an ideal FET for applications such as high speed switching, high current switching, general purpose switching, and motor control. The STP100N10F7 is often used in the power supply design and motor control design in industrial applications.

Field-effect transistors are three-terminal devices in which the current-carrying element is a semiconductor material. FETs are further classified into two types: junction FETs (JFETs) and metal oxide semiconductor FETs (MOSFETs). MOSFETs are further classified into two types: depletion-mode MOSFETs and enhancement-mode MOSFETs. The STP100N10F7 is a depletion-mode MOSFET, which is a type of FET that is normally switched-off and has to be switched-on.

The STP100N10F7 has three main terminals: the source, the drain, and the gate. As described previously, current-carrying element in FETs is a semiconductor material. This semiconductor material is polarized so that it forms an electronic barrier in a region between the source and the drain terminals. This electronic barrier is called the channel. The channel can be controlled by an external electric field generated by a voltage applied to the gate terminal. Thus, the channel resistance between the source and the drain can be changed by the variations of the applied voltage to the gate terminal. In other words, by changing the gate voltage, the drain-source current can be controlled.

The STP100N10F7 has a low gate to source capacitance and can be used in high power applications. It has a very low on-resistance, which means that it has low power loss and is capable of handling high currents and switching frequencies. Its design also allows for a low gate drive voltage, which makes it ideal for applications such as motor control and power conversion. It also has a high level of immunity to voltage spikes and can be easily operated in high humidity or wet environments.

In terms of applications, the STP100N10F7 is used in a wide range of industrial applications. It is an ideal FET for applications such as high speed switching, high current switching, general purpose switching, motor control and power supply design. It is used in applications such as motor control and robotics, power supply design, power conversion, and power management. It can also be used in applications such as remote control, HVAC control, computer peripheral control, and printer control. The STP100N10F7 is also often used in data and communications electronics as well as in consumer electronics.

In terms of its working principle, the STP100N10F7 is a depletion-mode MOSFET, which is a type of FET that is normally switched-off and has to be switched-on. It has a low gate to source capacitance and can be used in high power applications. The device works by changing the gate voltage in order to control the flow of current between the source and the drain terminals. The STP100N10F7 is a high power transistor with a very low gate to source capacitance and is capable of handling high currents and switching frequencies. Its design also allows for a low gate drive voltage, making it an ideal FET for motor control and power conversion applications.

The specific data is subject to PDF, and the above content is for reference

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