STP141NF55

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The STP141NF55 is an N-channel MOSFET known as an insulated-gate field-effect transistor (IGFET). This type of transistor is an efficient, low-power semiconductor device that can be used for switching, amplifying, and moderating electrical signals. It is an important component in integrated circuits and other power electronics components.

The STP141NF55 has an optimal field-effect mobility of about 210 cm2/V·s for efficient switching and amplitude modulation (AM). It is a single-gate, double-sided device, with a drain-source voltage (VP) of 60 volts (V). It has a drain current (ID) of 141 amperes (A) and a peak pulsed drain current (IDM) of 280 amps (A). An ON-resistance rating of 0.05 ohms (Ω) enables low-voltage, low-power switching. It also has a drain-source on-resistance (RDS(ON)) of 6mΩ and a threshold voltage (VGS(th)) of 1.5 volts (V). Furthermore, this MOSFET has a gate charge (QG) of 8.8nC and a total gate charge (Qgs + Qgd) of 12.3nC. The thermal resistance junction-to-ambient and junction-to-case (RθJA/RθJC) are, respectively, 160°C/W and 17°C/W.

The STP141NF55 is a versatile electronic device with a wide range of applications. It can be used in power switching and buck-boost converters, voltage regulator modules, high-density DC-DC converters, motor control systems, audio switching and amplifying circuits, relay circuits, high-frequency power amplifiers, and many other types of systems. It is also commonly used in automotive electronics, telecommunications, and data storage systems. Given its efficient performance and low power consumption, this MOSFET is particularly suitable for battery-powered devices such as smartphones and other mobile devices.

The STP141NF55 works by modulating the flow of electrons in a conductor. It is composed of a P-type silicon substrate, two isolated N-type regions (the drain and the source), and an insulated gate electrode on top of these two regions. When a positive voltage is applied to the gate electrode, it forms an electric field between the drain and the source. This electric field creates an electrical path that allows electrons to flow through the substrate and the N-type regions. The amount of electrons flowing through this electrical path is directly proportional to the magnitude of the voltage applied to the gate electrode. As the voltage increases, the amount of current also increases, allowing the STP141NF55 to operate as an efficient switch or amplifier.

In conclusion, the STP141NF55 is an important MOSFET known for its efficiency and low power consumption. It is a versatile device that can be used in a wide range of applications, including power switching, buck-boost converters, audio switching and amplifying circuits, and many other types of systems. It works by modulating the flow of electrons in a conductor, and its performance is directly proportional to the magnitude of the voltage applied to the gate electrode. This makes the STP141NF55 a reliable and cost-effective choice for many power electronics designs.

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