Allicdata Part #: | 497-15556-5-ND |
Manufacturer Part#: |
STP160N4LF6 |
Price: | $ 1.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 40V 120A TO220 |
More Detail: | N-Channel 40V 120A (Tc) 150W (Tc) Through Hole TO-... |
DataSheet: | STP160N4LF6 Datasheet/PDF |
Quantity: | 5 |
1 +: | $ 1.28520 |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8130pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 181nC @ 10V |
Series: | DeepGATE™, STripFET™ VI |
Rds On (Max) @ Id, Vgs: | 2.9 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STP160N4LF6 is an insulated-gate bipolar transistor (IGBT) module which is widely used in commercial electronic applications. It is designed for use under the conditions of moderate to heavy load, operating temperature, and voltage . This IGBT is usually used as a power converter in most power-switching applications and it is widely popular due to its high efficiency. It provides excellent performance and offers low cost.
The STP160N4LF6 is a lateral, N-channel IGBT device. It was specially designed to provide optimum performance and long life under adverse conditions. It has very low internal losses, which leads to excellent energy efficiency. The device features a reduced switching loss, which helps to improve the overall system efficiency and provides a more reliable operation. It also has a built-in protection system, which eliminates the possibility of a short circuit or over voltage.
The STP160N4LF6 is also classified as a low Vce(sat) IGBT, which means that it can be used in applications where a lower voltage is required. The low voltage switching provides a more efficient and reliable operation. The device is designed for switching applications where a low power loss is required. The low threshold voltage and low saturation voltage help to reduce the power losses.
The working principle of the STP160N4F6 IGBT is based on the voltage-controlled bipolar transistor theory. When a gate voltage is applied, a channel is formed between the N-type and P-type semiconductor materials and a current can flow through it. This current is limited by the applied gate voltage, which is known as the gate-source voltage (VGS).
The STP160N4LF6 IGBT can be used in various applications such as motor drives, uninterruptible power supplies, telecom systems, server and storage power supplies and switch mode power supplies. The device is also ideal for applications where high power density is needed. It can be used in applications that require a long operating lifetime and low power losses.
The STP160N4LF6 IGBT is widely used in commercial electronic applications due to its excellent performance, low cost and high efficiency. It is designed for use under the conditions of moderate to heavy load, operating temperature and voltage. The device offers low power loss, excellent energy efficiency and long time life performance.
The specific data is subject to PDF, and the above content is for reference
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