STP11NM65N

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The STP11NM65N is an N-channel, high-voltage power MOSFET transistor that has a drain current rating of 20A and a drain-source voltage rating of 650V. It is manufactured by STMicroelectronics. The STP11NM65N MOSFET is designed for use in high-voltage applications. It is suitable for motor control, lighting control, and other high-power applications.

Features

• 20A continuous drain current
• 650V drain-source breakdown voltage
• Low input capacitance
• Low output capacitance
• Low on-state resistance
• High gate threshold voltage
• Good tolerance to secondary breakdown
• Suitability for high-voltage applications

Applications

• Lighting control
• Heating control
• Motor control
• Switch mode power supplies
• General purpose high-voltage switching

Working Principle

The MOSFET is a field-effect transistor. It consists of four main parts: the source, drain, gate, and body. The source and drain are the electrically active areas of the MOSFET that are responsible for passing or blocking electrical signals. The gate is the controlling element of the MOSFET and is used to control the flow of current through the device. The body is the physical structure of the MOSFET that provides insulation between the source and the drain.

When a voltage is applied to the gate of the MOSFET, it creates an electric field that causes a change in the conductivity of the MOSFET. This allows current to flow between the source and the drain. The resistance of the MOSFET between the source and the drain is known as its on-state resistance. The smaller the on-state resistance, the more efficient the MOSFET will be and the greater the current it can support.

The STP11NM65N has a low input capacitance and a low output capacitance, which makes it suitable for high-speed switching applications. It also has a high gate threshold voltage, meaning it requires a higher than average voltage to be applied to the gate before it begins to pass current. This helps to prevent unwanted switching or crossover effects. Finally, the STP11NM65N has good tolerance to secondary breakdown, making it highly reliable for use in high-voltage applications.

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