
Allicdata Part #: | STP10N65K3-ND |
Manufacturer Part#: |
STP10N65K3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 10A TO220 |
More Detail: | N-Channel 650V 10A (Tc) 150W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1180pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 3.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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STP10N65K3 MOSFET is a very popular device utilised in a wide variety of applications ranging from motor controllers and switched-mode power supplies (SMPS) to industrial control systems. This device has become very wide-spread due to its versatility and low cost.
The STP10N65K3 is a N-Channel enhancement mode MOSFET featuring a fast switching speed, low gate charge and low on-state resistance. It is well suited for applications such as DC-DC converters, OR-ing diodes, and Class-D audio amplifiers. This MOSFET comes in a package compatible with the industry standard TO-220 with a lead space of 2.54mm.
The STP10N65K3 is designed for high power switching applications, such as motor control and other high power applications that require high efficiency and low RDS (on) values. It is highly efficient and relatively low cost, making it a favourable device for many applications. It has excellent switching characteristics with a turn-on time of less than 10ns, which allows for faster response to commands. This high switching speed helps to reduce switching losses, which in turn reduces power consumption.
The STP10N65K3 operates by passing a bias voltage between the gate and source terminals of the device. When a positive bias voltage is applied to the gate, it creates a channel between the source and drain terminals. This allows the current to pass through the device. When no bias voltage is applied the channel is blocked, preventing current flow. This behavior is known as the enhancement mode, where the application of a bias voltage is required for conduction.
The STP10N65K3 is capable of very low on-state resistance, making it suitable for a variety of applications. Its low RDS (on) value allows for more efficient operation and a higher power output possible. This device is also capable of very high current levels and can handle currents up to 10A, making it suitable for many power switching applications.
Due to its excellent performance characteristics and relatively low cost, the STP10N65K3 is a popular choice for many applications. It is commonly used in DC-DC converters, OR-ing diodes, and Class-D audio amplifiers.
In conclusion, the STP10N65K3 is a versatile and reliable MOSFET device. It features a fast switching speed, low gate charge and low on-state resistance. It is well suited for high power switching applications, such as motor control and other high power applications that require high efficiency and low RDS (on) values. It is highly efficient and relatively low cost, making it a favourite device for many applications. This MOSFET device is a great choice for a wide variety of applications.
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